NDP510BES62Z datasheet, PDF - EEWORLD Datasheet

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NDP510BES62Z: DescriptionPower Field-Effect Transistor, 13A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size255KB，6 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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NDP510BES62Z Overview

Power Field-Effect Transistor, 13A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

NDP510BES62Z Parametric

Parameter Name	Attribute value
Maker	Fairchild
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	65 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	13 A
Maximum drain-source on-resistance	0.15 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	52 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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NDP510BES62Z Related Products

	NDP510BES62Z	NDB510AL86Z	NDP510BS62Z	NDB510BL86Z	NDB510AEL86Z	NDP510AES62Z	NDB510BEL86Z
Description	Power Field-Effect Transistor, 13A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Power Field-Effect Transistor, 15A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	Power Field-Effect Transistor, 13A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Power Field-Effect Transistor, 13A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	Power Field-Effect Transistor, 15A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB	Power Field-Effect Transistor, 15A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Power Field-Effect Transistor, 13A I(D), 100V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Maker	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild
package instruction	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V	100 V	100 V	100 V
Maximum drain current (ID)	13 A	15 A	13 A	13 A	15 A	15 A	13 A
Maximum drain-source on-resistance	0.15 Ω	0.12 Ω	0.15 Ω	0.15 Ω	0.12 Ω	0.12 Ω	0.15 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-263AB	TO-220AB	TO-263AB	TO-263AB	TO-220AB	TO-263AB
JESD-30 code	R-PSFM-T3	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2
Number of components	1	1	1	1	1	1	1
Number of terminals	3	2	3	2	2	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	52 A	60 A	52 A	52 A	60 A	60 A	52 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	NO	YES	YES	NO	YES
Terminal form	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Avalanche Energy Efficiency Rating (Eas)	65 mJ	-	-	-	65 mJ	65 mJ	65 mJ
Shell connection	-	DRAIN	-	DRAIN	DRAIN	-	DRAIN

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