ST333CPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 720 A
FEATURES
•
•
•
•
•
•
•
•
•
•
•
Metal case with ceramic insulator
All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
International standard case TO-200AB (E-PUK)
High surge current capability
Low thermal impedance
High speed performance
Lead (Pb)-free
Designed and qualified for industrial level
RoHS
COMPLIANT
TO-200AB (E-PUK)
PRODUCT SUMMARY
I
T(AV)
720 A
TYPICAL APPLICATIONS
•
•
•
•
Inverters
Choppers
Induction heating
All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
TEST CONDITIONS
VALUES
720
T
hs
55
1435
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
25
11 000
11 500
605
553
400 to 800
Range
10 to 30
- 40 to 125
UNITS
A
°C
A
°C
A
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
kA
2
s
V
µs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
800
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
50
ST333C..C
Document Number: 94376
Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
ST333CPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 720 A
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100 µs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
R
Voltage before turn-on V
D
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
1630
1630
1350
720
50
V
DRM
50
40
10/0.47
1420
1390
1090
550
2520
2670
2440
1450
50
V
DRM
-
2260
2330
2120
1220
7610
4080
2420
1230
50
V
DRM
-
6820
3600
2100
1027
V
A/µs
55
10/0.47
°C
Ω/µF
A
55
40
10/0.47
55
40
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one half cycle,
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 mls
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
I
2
√t
V
TM
V
T(TO)1
V
T(TO)2
r
t1
r
t2
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
720 (350)
55 (75)
1435
11 000
11 500
9250
Sinusoidal half wave,
initial T
J
= T
J
maximum
9700
605
553
428
391
6050
1.96
0.91
0.93
0.58
0.58
600
1000
mΩ
V
kA
2
√s
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
I
TM
= 1810 A, T
J
= T
J
maximum,
t
p
= 10 ms sine wave pulse
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
Ω,
I
G
= 1 A
mA
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94376
Revision: 30-Apr-08
ST333CPbF Series
Inverter Grade Thyristors
Vishay High Power Products
(Hockey PUK Version), 720 A
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned on current
Typical delay time
minimum
Maximum turn-off time
maximum
t
q
SYMBOL
dI/dt
t
d
TEST CONDITIONS
T
J
= T
J
maximum, V
DRM
= Rated V
DRM
I
TM
= 2 x dI/dt
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 µs
Resistive load, gate pulse: 10 V, 5
Ω
source
T
J
= T
J
maximum,
I
TM
= 550 A, commutating dI/dt = 40 A/µs
V
R
= 50 V, t
p
= 500 µs, dV/dt: See table in device code
VALUES
1000
1.1
10
30
µs
UNITS
A/µs
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum, linear to 80 % V
DRM
,
higher value available on request
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
50
UNITS
V/µs
mA
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
Ω
T
J
= T
J
maximum, t
p
≤
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
T
J
= T
J
maximum, rated V
DRM
applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
SYMBOL
T
J
T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.09
0.04
0.020
0.010
9800
(1000)
83
See dimensions - link at the end of datasheet
N
(kg)
g
K/W
UNITS
°C
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
R
thC-hs
TO-200AB (E-PUK)
Document Number: 94376
Revision: 30-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
ST333CPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 720 A
ΔR
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.010
0.012
0.015
0.022
0.036
DOUBLE SIDE
0.011
0.012
0.015
0.022
0.036
RECTANGULAR CONDUCTION
SINGLE SIDE
0.007
0.012
0.016
0.023
0.036
DOUBLE SIDE
0.007
0.013
0.017
0.023
0.036
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Maximum Allowable Heatsink T
emperature (°C)
Maximum Allowable Heatsink T
emperature (°C)
130
120
110
100
90
80
70
60
50
40
30
20
0
100
200
300
400
500
600
Average On-s
tate Current (A)
30°
60°
90°
120°
180°
Conduction Angle
130
120
110
100
90
80
70
60
50
40
30
20
10
0
200
30°
S 333C..C S
T
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.09 K/ W
S 333C..C S
T
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.04 K/ W
Conduction Angle
60°
90°
120°
400
600
800
180°
1000
Average On-s
tate Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Maximum Allowable Heatsink T
emperature (°C)
Maximum Allowable Heatsink T
emperature (°C)
130
120
110
100
90
80
70
60
50
40
30
20
30°
60°
90°
120°
180°
DC
Conduction Period
130
120
110
100
90
80
70
60
50
40
30
20
0
30°
60°
S 333C..C S
T
eries
(S
ingle S Cooled)
ide
R
thJ-hs
(DC) = 0.09 K/ W
S 333C..C S
T
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.04 K/ W
Conduction Period
90°
120°
180°
DC
200 400 600 800 1000 1200 1400 1600
Average On-state Current (A)
0 100 200 300 400 500 600 700 800 900
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 94376
Revision: 30-Apr-08
ST333CPbF Series
Inverter Grade Thyristors
Vishay High Power Products
(Hockey PUK Version), 720 A
Maximum Average On-s
tate Power Loss(W)
ine
Peak Half S Wave On-state Current (A)
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
200
400
600
800
1000
Average On-state Current (A)
Conduction Angle
12000
180°
120°
90°
60°
30°
RMS Limit
Maximum Non R
epetitive S
urge Current
Vers Pulse T
us
rain Duration. Control
11000
Of Conduction May Not Be Maintained.
Initial T = 125°C
J
10000
No Voltage Reapplied
Rated V
RRM
Reapplied
9000
8000
7000
6000
5000
S 333C..C S
T
eries
S 333C..C S
T
eries
T = 125°C
J
4000
0.01
0.1
Pulse T
rain Duration (s)
1
Fig. 5 - On-State Power Loss Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
Instantaneous On-state Current (A)
Maximum Average On-s
tate Power Loss (W)
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
DC
180°
120°
90°
60°
30°
RMS Limit
T = 25°C
1000
J
T = 125°C
J
Conduction Period
S 333C..C S
T
eries
T = 125°C
J
200 400 600 800 1000 12001400 1600
Average On-state Current (A)
S 333C..C S
T
eries
100
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5
Instantaneous On-state Voltage (V)
Fig. 6 - On-State Power Loss Characteristics
Fig. 9 - On-State Voltage Drop Characteristics
9500
9000
8500
8000
7500
7000
6500
6000
5500
5000
4500
1
At Any R
ated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
T
ransient T
hermal Impedance Z
thJ-hs
(K/ W)
Peak Half S Wave On-state Current (A)
ine
10000
0.1
S 333C..C S
T
eries
0.01
S
teady S
tate Value
R
thJ-hs
= 0.09 K/ W
(S
ingle S
ide Cooled)
R
thJ-hs
= 0.04 K/ W
(Double S Cooled)
ide
(DC Operation)
S 333C..C S
T
eries
10
100
0.001
0.001
0.01
0.1
1
10
Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N)
S
quare Wave Pulse Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Document Number: 94376
Revision: 30-Apr-08
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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