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2SA1541F

Description
Power Bipolar Transistor, 0.2A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, TO-126ML, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size46KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SA1541F Overview

Power Bipolar Transistor, 0.2A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, TO-126ML, 3 PIN

2SA1541F Parametric

Parameter NameAttribute value
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature140 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)7 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Base Number Matches1
Ordering number:ENN2440B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1541/2SC3956
High-Definition CRT Display
Video Output Applications
Applications
· High-definition CRT display video output, wide-band
amplifier.
Package Dimensions
unit:mm
2042B
[2SA1541/2SC3956]
8.0
1.0
1.4
Features
· High gain-bandwidth product : f
T
=300MHz.
· High breakdown voltage : V
CEO
=200Vmin.
· Small reverse transfer capacitance and excellent high
frequency characteristics : C
re
=2.2pF/NPN, 2.7pF/
PNP.
· Complementary PNP and NPN types.
· Adoption of FBET process.
· Micaless type : TO-126 plastic package.
4.0
1.0
3.3
3.0
1.5
7.5
1.6
0.8
3.0
0.8
0.75
15.5
11.0
0.7
1
2
3
( ) : 2SA1541
4.8
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Peak Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
Conditions
1.7
2.4
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Ratings
(–)200
(–)200
(–)3
(–)200
(–)300
1.3
7
150
–55 to +150
Unit
V
V
V
mA
mA
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
D
60 to 120
E
100 to 200
Conditions
VCB=(–)150V, IE=0
VEB=(–)2V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)10V, IC=(–)100mA
VCE=(–)30V, IC=(–)50mA
F
Ratings
min
typ
max
(–)0.1
(–)1.0
40*
20
300
320*
Unit
µA
µA
MHz
*h
FE
1 : The 2SA1541/2SC3956 are classified by 10mA h
FE
as follows :
Rank
hFE
C
40 to 80
160 to 320
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
53002RM (KT)/72098HA (KT)/8238MO/2247TA, TS No.2440-1/4

2SA1541F Related Products

2SA1541F 2SC3956C 2SC3956D AP73T03GJ-HF 2SA1541C 2SA1541D 2SA1541E
Description Power Bipolar Transistor, 0.2A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, TO-126ML, 3 PIN Power Bipolar Transistor, 0.2A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, TO-126ML, 3 PIN Power Bipolar Transistor, 0.2A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, TO-126ML, 3 PIN Fast Switching Characteristic Power Bipolar Transistor, 0.2A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, TO-126ML, 3 PIN Power Bipolar Transistor, 0.2A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, TO-126ML, 3 PIN Power Bipolar Transistor, 0.2A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, TO-126ML, 3 PIN
Parts packaging code SIP SIP SIP - SIP SIP SIP
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 - 3 3 3
Reach Compliance Code unknow unknown unknown - unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 - EAR99 EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A - 0.2 A 0.2 A 0.2 A
Collector-emitter maximum voltage 200 V 200 V 200 V - 200 V 200 V 200 V
Configuration SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 160 40 60 - 40 60 100
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 - 1 1 1
Number of terminals 3 3 3 - 3 3 3
Maximum operating temperature 140 °C 150 °C 150 °C - 140 °C 140 °C 140 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP NPN NPN - PNP PNP PNP
Maximum power dissipation(Abs) 7 W 7 W 7 W - 7 W 7 W 7 W
Certification status Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified
surface mount NO NO NO - NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE - SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER - AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON - SILICON SILICON SILICON
Nominal transition frequency (fT) 300 MHz 300 MHz 300 MHz - 300 MHz 300 MHz 300 MHz
Base Number Matches 1 - - - 1 1 1

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