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2SB1165S

Description
5A, 50V, PNP, Si, POWER TRANSISTOR, TO-126LP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size44KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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2SB1165S Overview

5A, 50V, PNP, Si, POWER TRANSISTOR, TO-126LP, 3 PIN

2SB1165S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSIP
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Factory Lead Time1 week
Maximum collector current (IC)5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)140
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
Base Number Matches1
Ordering number:ENN2046A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1165/2SD1722
50V/5A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters.
Package Dimensions
unit:mm
2043B
[2SB1165/2SD1722]
8.0
4.0
2.0
2.7
Features
· Low collector-to-emitter saturation voltage.
· High f
T
.
· Excellent linearity of h
FE
.
· Fast switching time.
1.6
0.8
1.5
0.8
0.6
3.0
15.5
9.0
11.0
0.5
( ) : 2SB1165
1
2.4
2
3
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
4.8
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126LP
1.2
Ratings
(–)60
(–)50
(–)6
(–)5
(–)8
1.2
Unit
V
V
V
A
A
W
W
Tc=25˚C
20
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)0.5A
VCE=(–)2V, IC=(–)4A
VCE=(–)5V, IC=(–)1A
70*
35
180
(130)
Q
70 to 140
R
100 to 200
S
140 to 280
T
200 to 400
Conditions
Ratings
min
typ
max
(–)1
(–)1
400*
Unit
µA
µA
MHz
MHz
* : The 2SB1165/2SD1722 are classified by 0.5A h
FE
as follows :
Rank
hFE
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1503TN (KT)/92098HA (KT)/4137KI/D176TA, TS No.2046–1/5

2SB1165S Related Products

2SB1165S 2SD1722S 2SB1165T
Description 5A, 50V, PNP, Si, POWER TRANSISTOR, TO-126LP, 3 PIN 5A, 50V, NPN, Si, POWER TRANSISTOR, TO-126LP, 3 PIN 5A, 50V, PNP, Si, POWER TRANSISTOR, TO-126LP, 3 PIN
Is it Rohs certified? conform to conform to conform to
Parts packaging code SIP SIP SIP
package instruction IN-LINE, R-PSIP-T3 TO-126LP, 3 PIN TO-126LP, 3 PIN
Contacts 3 3 3
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 5 A 5 A 5 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 140 140 200
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Polarity/channel type PNP NPN PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 130 MHz 180 MHz 130 MHz
Base Number Matches 1 1 1
Factory Lead Time 1 week 1 week -
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