ER303 datasheet, PDF - EEWORLD Datasheet

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ER303: DescriptionRectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-27,; CategoryDiscrete semiconductor diode; File Size91KB，2 Pages; ManufacturerGalaxy Semi-Conductor Co., Ltd.; Environmental Compliance

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ER303 Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-27,

ER303 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Galaxy Semi-Conductor Co., Ltd.
package instruction	O-PALF-W2
Reach Compliance Code	unknown
application	SUPER FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.25 V
JEDEC-95 code	DO-27
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	300 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.035 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

ER303 Related Products

	ER303	ER301	ER304	ER306
Description	Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-27,	Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-27,	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-27,	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-27,
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.	Galaxy Semi-Conductor Co., Ltd.
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknown	unknown	unknown	unknown
application	SUPER FAST RECOVERY	SUPER FAST RECOVERY	SUPER FAST RECOVERY	SUPER FAST RECOVERY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.25 V	0.95 V	1.25 V	1.7 V
JEDEC-95 code	DO-27	DO-27	DO-27	DO-27
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	150 A	150 A	150 A	150 A
Number of components	1	1	1	1
Phase	1	1	1	1
Number of terminals	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	3 A	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	300 V	100 V	400 V	600 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA
Maximum reverse recovery time	0.035 µs	0.035 µs	0.035 µs	0.035 µs
surface mount	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL

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