BT169BAMO datasheet, PDF - EEWORLD Datasheet

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BT169BAMO: DescriptionSilicon Controlled Rectifier, 0.8 A, 200 V, SCR, TO-92, PLASTIC, SPT, SC-43, TO-92 VARIANT, 3 PIN; CategoryAnalog mixed-signal IC Trigger device; File Size46KB，6 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BT169BAMO Overview

Silicon Controlled Rectifier, 0.8 A, 200 V, SCR, TO-92, PLASTIC, SPT, SC-43, TO-92 VARIANT, 3 PIN

BT169BAMO Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	TO-92
package instruction	PLASTIC, SPT, SC-43, TO-92 VARIANT, 3 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	SENSITIVE GATE
Nominal circuit commutation break time	100 µs
Configuration	SINGLE
Maximum DC gate trigger current	0.2 mA
Maximum DC gate trigger voltage	0.8 V
Maximum holding current	5 mA
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e3
Maximum leakage current	0.1 mA
On-state non-repetitive peak current	9 A
Number of components	1
Number of terminals	3
Maximum on-state current	800 A
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	0.8 A
Off-state repetitive peak voltage	200 V
Repeated peak reverse voltage	200 V
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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Philips Semiconductors

Product specification

Thyristors

logic level

GENERAL DESCRIPTION

Passivated, sensitive gate thyristors

in a plastic envelope, intended for use

in general purpose switching and

phase control applications. These

devices are intended to be interfaced

directly to microcontrollers, logic

integrated circuits and other low

power gate trigger circuits.

BT169 series

QUICK REFERENCE DATA

SYMBOL

DRM

RRM

T(AV)

T(RMS)

TSM

PARAMETER

BT169

Repetitive peak

off-state voltages

Average on-state

current

RMS on-state current

Non-repetitive peak

on-state current

MAX MAX MAX MAX UNIT

200

0.5

0.8

400

0.5

0.8

500

0.5

0.8

600

0.5

0.8

PINNING - TO92 variant

DESCRIPTION

anode

gate

cathode

PIN CONFIGURATION

SYMBOL

3 2 1

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

half sine wave;

lead

≤

83 ˚C

all conduction angles

t = 10 ms

t = 8.3 ms

half sine wave;

= 25 ˚C prior to surge

t = 10 ms

= 2 A; I

= 10 mA;

/dt = 100 mA/µs

-40

200

MAX.

400

0.5

0.8

0.32

0.1

150

125

500

600

UNIT

A/µs

˚C

DRM

, V

RRM

Repetitive peak off-state

voltages

T(AV)

T(RMS)

TSM

Average on-state current

RMS on-state current

Non-repetitive peak

on-state current

/dt

RGM

G(AV)

stg

t for fusing

Repetitive rate of rise of

on-state current after

triggering

Peak gate current

Peak gate voltage

Peak reverse gate voltage

Peak gate power

Average gate power

over any 20 ms period

Storage temperature

Operating junction

temperature

Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

September 2001

Rev 1.500

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