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IS41LV16257B-35TL-TR

Description
Fast Page DRAM, 256KX16, 35ns, CMOS, PDSO40, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-40
Categorystorage    storage   
File Size190KB,20 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Environmental Compliance
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IS41LV16257B-35TL-TR Overview

Fast Page DRAM, 256KX16, 35ns, CMOS, PDSO40, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-40

IS41LV16257B-35TL-TR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts40
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFAST PAGE
Maximum access time35 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 codeR-PDSO-G40
JESD-609 codee3
length18.41 mm
memory density4194304 bit
Memory IC TypeFAST PAGE DRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of ports1
Number of terminals40
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width10.16 mm
IS41LV16257B
256K x 16 (4-MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
DESCRIPTION
The
ISSI
IS41LV16257B is 262,144 x 16-bit high-
performance CMOS Dynamic Random Access
Memories. Fast Page Mode allows 512 random
accesses within a single row with access cycle time as
short as 12 ns per 16-bit word. The Byte Write control,
of upper and lower byte, makes these devices ideal for
use in 16- and 32-bit wide data bus systems.
These features make the IS41LV16257B ideally suited
for high band-width graphics, digital signal processing,
high-performance computing systems, and peripheral
applications.
The IS41LV16257B is packaged in a 40-pin, 400-mil
SOJ and TSOP (Type II).
JUNE 2007
FEATURES
Fast access and cycle time
TTL compatible inputs and outputs
Refresh Interval: 512 cycles/8 ms
Refresh Mode:
RAS-Only, CAS-before-RAS
(CBR), and Hidden
JEDEC standard pinout
Single power supply: 3.3V ± 10%
Byte Write and Byte Read operation via
two
CAS
Lead-free available
KEY TIMING PARAMETERS
Parameter
Max.
RAS
Access Time (t
RAC
)
Max.
CAS
Access Time (t
CAC
)
Max. Column Address Access Time (t
AA
)
Min. Fast Page Mode Cycle Time (t
PC
)
Min. Read/Write Cycle Time (t
RC
)
-35
35
11
18
14
60
-60
60
15
30
25
110
Unit
ns
ns
ns
ns
ns
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc.
Rev. C
06/18/07
1

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Description Fast Page DRAM, 256KX16, 35ns, CMOS, PDSO40, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-40 Fast Page DRAM, 256KX16, 35ns, CMOS, PDSO40, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-40 Fast Page DRAM, 256KX16, 35ns, CMOS, PDSO40, 0.400 INCH, LEAD FREE, PLASTIC, SOJ-40 Fast Page DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, LEAD FREE, PLASTIC, SOJ-40 Fast Page DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-40 Fast Page DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 Fast Page DRAM, 256KX16, 60ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, TSOP2-40
Is it Rohs certified? conform to conform to conform to conform to conform to incompatible incompatible
Maker Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
Parts packaging code TSOP2 TSOP2 SOJ SOJ TSOP2 SOJ TSOP2
package instruction TSOP2, TSOP2, TSOP40/44,.46,32 SOJ, SOJ, SOJ40,.44 TSOP2, TSOP40/44,.46,32 0.400 INCH, PLASTIC, SOJ-40 0.400 INCH, PLASTIC, TSOP2-40
Contacts 40 40 40 40 40 40 40
Reach Compliance Code compliant compliant compliant compliant compliant unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE
Maximum access time 35 ns 35 ns 35 ns 60 ns 60 ns 60 ns 60 ns
Other features RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 code R-PDSO-G40 R-PDSO-G40 R-PDSO-J40 R-PDSO-J40 R-PDSO-G40 R-PDSO-J40 R-PDSO-G40
JESD-609 code e3 e3 e3 e3 e3 e0 e0
length 18.41 mm 18.41 mm 26.035 mm 26.035 mm 18.41 mm 26.035 mm 18.41 mm
memory density 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit
Memory IC Type FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM
memory width 16 16 16 16 16 16 16
Humidity sensitivity level 3 3 3 3 3 3 3
Number of functions 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1
Number of terminals 40 40 40 40 40 40 40
word count 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words
character code 256000 256000 256000 256000 256000 256000 256000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 85 °C 70 °C 70 °C 70 °C 70 °C
organize 256KX16 256KX16 256KX16 256KX16 256KX16 256KX16 256KX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 TSOP2 SOJ SOJ TSOP2 SOJ TSOP2
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius) 260 260 260 260 260 NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.2 mm 3.75 mm 3.75 mm 1.2 mm 3.75 mm 1.2 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface MATTE TIN Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING J BEND J BEND GULL WING J BEND GULL WING
Terminal pitch 0.8 mm 0.8 mm 1.27 mm 1.27 mm 0.8 mm 1.27 mm 0.8 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40 40 40 NOT SPECIFIED NOT SPECIFIED
width 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm
I/O type - COMMON - COMMON COMMON COMMON COMMON
Output characteristics - 3-STATE - 3-STATE 3-STATE 3-STATE 3-STATE
Encapsulate equivalent code - TSOP40/44,.46,32 - SOJ40,.44 TSOP40/44,.46,32 SOJ40,.44 TSOP40/44,.46,32
power supply - 3.3 V - 3.3 V 3.3 V 3.3 V 3.3 V
refresh cycle - 512 - 512 512 512 512
self refresh - NO - NO NO NO NO
Maximum standby current - 0.001 A - 0.001 A 0.001 A 0.001 A 0.001 A
Maximum slew rate - 0.23 mA - 0.17 mA 0.17 mA 0.17 mA 0.17 mA

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