HA8550S-E datasheet, PDF - EEWORLD Datasheet

HA8550S-E: DescriptionSmall Signal Bipolar Transistor, 0.7A I(C), PNP; CategoryDiscrete semiconductor The transistor; File Size55KB，5 Pages; ManufacturerHSMC; Websitehttp://www.hsmc.com.tw/

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HA8550S-E Overview

Small Signal Bipolar Transistor, 0.7A I(C), PNP

Parameter Name	Attribute value
Maker	HSMC
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.7 A
Configuration	Single
Minimum DC current gain (hFE)	250
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.625 W
surface mount	NO
Nominal transition frequency (fT)	150 MHz

	HA8550S-E	HA8550S-D	HA8550S-C
Description	Small Signal Bipolar Transistor, 0.7A I(C), PNP	Small Signal Bipolar Transistor, 0.7A I(C), PNP	Small Signal Bipolar Transistor, 0.7A I(C), PNP
Maker	HSMC	HSMC	HSMC
Reach Compliance Code	unknown	unknown	unknown
Maximum collector current (IC)	0.7 A	0.7 A	0.7 A
Configuration	Single	Single	Single
Minimum DC current gain (hFE)	250	150	100
Maximum operating temperature	150 °C	150 °C	150 °C
Polarity/channel type	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.625 W	0.625 W	0.625 W
surface mount	NO	NO	NO
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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