Silicon Controlled Rectifier, 520A I(T)RMS, 330000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element, TO-209AE, HERMETIC SEALED, METAL, TO-118, 3 PIN
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Vishay |
Parts packaging code | TO-118 |
package instruction | POST/STUD MOUNT, O-MUPM-H3 |
Contacts | 3 |
Reach Compliance Code | compliant |
Nominal circuit commutation break time | 100 µs |
Configuration | SINGLE |
Critical rise rate of minimum off-state voltage | 500 V/us |
Maximum DC gate trigger current | 200 mA |
Maximum DC gate trigger voltage | 3 V |
Maximum holding current | 600 mA |
JEDEC-95 code | TO-209AE |
JESD-30 code | O-MUPM-H3 |
JESD-609 code | e0 |
Maximum leakage current | 50 mA |
On-state non-repetitive peak current | 9420 A |
Number of components | 1 |
Number of terminals | 3 |
Maximum on-state current | 330000 A |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -40 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | POST/STUD MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Not Qualified |
Maximum rms on-state current | 520 A |
Off-state repetitive peak voltage | 2000 V |
Repeated peak reverse voltage | 2000 V |
surface mount | NO |
Terminal surface | TIN LEAD |
Terminal form | HIGH CURRENT CABLE |
Terminal location | UPPER |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Trigger device type | SCR |
ST330S20P1 | ST330S12P0 | ST330S20P0 | |
---|---|---|---|
Description | Silicon Controlled Rectifier, 520A I(T)RMS, 330000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element, TO-209AE, HERMETIC SEALED, METAL, TO-118, 3 PIN | Silicon Controlled Rectifier, 520A I(T)RMS, 330000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AE, HERMETIC SEALED, METAL, TO-118, 3 PIN | Silicon Controlled Rectifier, 520A I(T)RMS, 330000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element, TO-209AE, HERMETIC SEALED, METAL, TO-118, 3 PIN |
Is it lead-free? | Contains lead | Contains lead | Contains lead |
Is it Rohs certified? | incompatible | incompatible | incompatible |
Maker | Vishay | Vishay | Vishay |
Parts packaging code | TO-118 | TO-118 | TO-118 |
package instruction | POST/STUD MOUNT, O-MUPM-H3 | POST/STUD MOUNT, O-MUPM-H3 | POST/STUD MOUNT, O-MUPM-H3 |
Contacts | 3 | 3 | 3 |
Reach Compliance Code | compliant | compliant | compliant |
Nominal circuit commutation break time | 100 µs | 100 µs | 100 µs |
Configuration | SINGLE | SINGLE | SINGLE |
Maximum DC gate trigger current | 200 mA | 200 mA | 200 mA |
Maximum DC gate trigger voltage | 3 V | 3 V | 3 V |
Maximum holding current | 600 mA | 600 mA | 600 mA |
JEDEC-95 code | TO-209AE | TO-209AE | TO-209AE |
JESD-30 code | O-MUPM-H3 | O-MUPM-H3 | O-MUPM-H3 |
Maximum leakage current | 50 mA | 50 mA | 50 mA |
On-state non-repetitive peak current | 9420 A | 9000 A | 9420 A |
Number of components | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 |
Maximum on-state current | 330000 A | 330000 A | 330000 A |
Maximum operating temperature | 125 °C | 125 °C | 125 °C |
Minimum operating temperature | -40 °C | -40 °C | -40 °C |
Package body material | METAL | METAL | METAL |
Package shape | ROUND | ROUND | ROUND |
Package form | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | 225 | NOT SPECIFIED |
Certification status | Not Qualified | Not Qualified | Not Qualified |
Maximum rms on-state current | 520 A | 520 A | 520 A |
Off-state repetitive peak voltage | 2000 V | 1200 V | 2000 V |
Repeated peak reverse voltage | 2000 V | 1200 V | 2000 V |
surface mount | NO | NO | NO |
Terminal form | HIGH CURRENT CABLE | HIGH CURRENT CABLE | HIGH CURRENT CABLE |
Terminal location | UPPER | UPPER | UPPER |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Trigger device type | SCR | SCR | SCR |
Critical rise rate of minimum off-state voltage | 500 V/us | - | 500 V/us |
JESD-609 code | e0 | - | e0 |
Terminal surface | TIN LEAD | - | TIN LEAD |