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HE8550SD

Description
TRANSISTOR,BJT,PNP,20V V(BR)CEO,700MA I(C),TO-92
CategoryDiscrete semiconductor    The transistor   
File Size60KB,5 Pages
ManufacturerHSMC
Websitehttp://www.hsmc.com.tw/
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HE8550SD Overview

TRANSISTOR,BJT,PNP,20V V(BR)CEO,700MA I(C),TO-92

HE8550SD Parametric

Parameter NameAttribute value
MakerHSMC
Reach Compliance Codeunknown
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6129
Issued Date : 1993.01.15
Revised Date : 2004.07.26
Page No. : 1/5
HE8550S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HE8550S is designed for general purpose amplifier applications.
Features
High DC Current gain: 100-500 at I
C
=150mA
Complementary to HE8050S
TO-92
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature ................................................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ............................................................................................................... 625 mW
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage .......................................................................................................................... -25 V
V
CEO
Collector to Emitter Voltage ....................................................................................................................... -20 V
V
EBO
Emitter to Base Voltage ............................................................................................................................... -5 V
I
C
Collector Current ...................................................................................................................................... -700 mA
Electrical Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
*V
CE(sat)
V
BE(on)
*h
FE1
*h
FE2
f
T
Cob
Min.
-25
-20
-5
-
-
-
100
-
150
-
Typ.
-
-
-
-
-
-
-
100
-
-
Max.
-
-
-
-1
-0.5
-1
500
-
-
10
MHz
pF
Unit
V
V
V
uA
V
V
I
C
=-10uA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10uA, I
C
=0
V
CB
=-20V, I
E
=0
I
C
=-0.5A, I
B
=-50mA
V
CE
=-1V, I
C
=-150mA
V
CE
=-1V, I
C
=-150mA
V
CE
=-1V, I
C
=-500mA
V
CE
=-10V, I
C
=-20mA, f=100MHz
V
CB
=-10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification Of hEF
Rank
h
FE1
h
FE2
C
100-200
-
C1
100-200
>100
D
160-300
-
D1
160-300
>100
E
250-500
-
HE8550S
HSMC Product Specification

HE8550SD Related Products

HE8550SD HE8550SC HE8550SD1 HE8550SE HE8550SC1
Description TRANSISTOR,BJT,PNP,20V V(BR)CEO,700MA I(C),TO-92 TRANSISTOR,BJT,PNP,20V V(BR)CEO,700MA I(C),TO-92 TRANSISTOR,BJT,PNP,20V V(BR)CEO,700MA I(C),TO-92 TRANSISTOR,BJT,PNP,20V V(BR)CEO,700MA I(C),TO-92 TRANSISTOR,BJT,PNP,20V V(BR)CEO,700MA I(C),TO-92
Maker HSMC HSMC HSMC HSMC HSMC
Reach Compliance Code unknown unknown unknown unknown unknown
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