RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
| Parameter Name | Attribute value |
| Maker | Qorvo |
| package instruction | DISK BUTTON, O-XRDB-F4 |
| Reach Compliance Code | unknown |
| Other features | LOW NOISE |
| Shell connection | SOURCE |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 10 V |
| FET technology | HIGH ELECTRON MOBILITY |
| highest frequency band | K BAND |
| JESD-30 code | O-XRDB-F4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | DEPLETION MODE |
| Package body material | UNSPECIFIED |
| Package shape | ROUND |
| Package form | DISK BUTTON |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | RADIAL |
| Transistor component materials | GALLIUM ARSENIDE |
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