PHOTODIODE
InGaAs PIN photodiode with preamp
G9442-14
ROSA type, 1.3/1.55 µm, 622 Mbps
Features
Applications
l
φ1.25
mm sleeve type ROSA (Receiver Optical
Sub-Assembly)
l
High-speed response: 622 Mbps
l
High gain with AGC (Auto Gain Control): 16 V/mW (-30 dBm)
l
Low power supply voltage: 3.3 V
l
Differential output
l
Sensitivity: 0 to -31.5 dBm Typ.
l
Optical return loss: 35 dB
l
SDH/SONET
l
Optical fiber communications
s
Absolute maximum ratings (Ta=25 °C)
Parameter
Supply voltage
Operating temperature
Storage temperature
*1: No condensation
Symbol
Vcc
Topr
Tstg
Value
-0.3, +3.8
-20 to +70 *
1
-40 to +85 *
1
Unit
V
°C
°C
s
Electrical and optical characteristics
(Ta=25 °C, Vcc=3.3 V, Vee=0 V, R
L
=500
Ω
*
2
,
λ=1310
nm, unless otherwise noted)
Parameter
Photo sensitivity
Supply current
Output bias voltage
Cut-off frequency
Low cut-off frequency
Noise equivalent power
Minimum receivable sensitivity
Maximum receivable sensitivity
Symbol
S
Icc
Vo
fc
fc-L
NEP
Pmin
Pmax
Condition
Pin= -30 dBm *
3
Dark state, R
L
=∞
Dark state, R
L
=∞
Pin= -30 dBm,
-3 dB (0 dB at 20 MHz) *
3
-3 dB
D ark state, fc-L to 46 7 M H z *
3
622 Mbps, NRZ,
PN=23, BER=10
-10
,
Extinction ratio=8.2 dB
Min.
10
-
-
380
-
-
-
-
28
Typ.
16
30
1.5
550
60
95
-31.5
0
35
Max.
-
40
-
-
-
126
-
-
-
dB
Unit
V/mW
mA
V
MHz
kHz
nWrms
dBm
Optical return loss
ORL
*2: Output: Capacitive coupling
This module should be used with a load resistance larger than 500
Ω.
*3: Single-ended (Vout+) measurement
PRELIMINARY DATA
Jan. 2004
1
InGaAs PIN photodiode with preamp
s
Photo sensitivity vs. average input optical power
100
(Typ. Ta=25 ˚C, Duty ratio=50 %, Pulse width=10 ns,
λ=1310
nm)
G9442-14
s
Bit error rate
10
-3
(Typ. Ta=25 ˚C, Bit rate=622 Mbps, PN=23,
λ=1310
nm)
PHOTO SENSITIVITY
(V/mW)
10
-4
BIT ERROR RATE
10
-5
10
10
-6
10
10
-7
-8
10
-9
10
-10
10
10
-12
-38 -37 -36 -35 -34 -33 -32 -31 -30 -29 -28
-11
1
-40
-35
-30
-25
-20
-15
-10
-5
0
AVERAGE OPTICAL INPUT POWER
(dBm)
KIRDB0292EB
AVERAGE OPTICAL INPUT POWER
(dBm)
KIRDB0293EB
s
Eye diagram
s
Dimensional outline (unit: mm)
5.08
2.92
Vout+
2.8 ± 0.3
3.38
(OPTICAL REFERENCE
PLANE)
4.04
4.17 ± 0.1
1.27 ± 0.1
+0.5
7.39
-0.1
Vout-
(4 ×)
0.45 ± 0.1
(90˚)
2.54
Vcc
Vout-
Vee
Vout+
5.4
6.35
-0.1
+0
6.23
-0.15
+0
Bit rate=622 Mbps, PN=23,
λ=1310
nm
Pin= -25 dBm
s
Operating circuit example
Vcc=3.3 V
+0.15
5.94
-0.1
(13)
Tolerance unless otherwise
noted: ±0.2
0.1 µF
TESTER
0.1 µF
Vout+ 450
Ω
COAXIAL
Vout- 450
Ω
CABLE
50
Ω
KIRDA0178EA
AGC
R
LIGHT INPUT
Vee=GND
0.1 µF
50
Ω
KIRDC0052EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KIRD1071E01
2
Jan. 2004 DN
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