Small Signal Field-Effect Transistor, 0.4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN
Parameter Name | Attribute value |
Maker | Fairchild |
Parts packaging code | TO-92 |
package instruction | CYLINDRICAL, O-PBCY-T3 |
Contacts | 3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 60 V |
Maximum drain current (ID) | 0.4 A |
Maximum drain-source on-resistance | 2 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss) | 5 pF |
JESD-30 code | O-PBCY-T3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | ROUND |
Package form | CYLINDRICAL |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | BOTTOM |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
BS270J18Z | BS270D26Z | BS270D74Z | BS270J05Z | BS270D75Z | BS270L34Z | BS270D27Z | |
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Description | Small Signal Field-Effect Transistor, 0.4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN | Small Signal Field-Effect Transistor, 0.4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | TRANSISTOR 400 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, FET General Purpose Small Signal | Small Signal Field-Effect Transistor, 0.4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, 3 PIN | Small Signal Field-Effect Transistor, 0.4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Small Signal Field-Effect Transistor, 0.4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Small Signal Field-Effect Transistor, 0.4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 |
package instruction | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
Maximum drain current (ID) | 0.4 A | 0.4 A | 0.4 A | 0.4 A | 0.4 A | 0.4 A | 0.4 A |
Maximum drain-source on-resistance | 2 Ω | 2 Ω | 2 Ω | 2 Ω | 2 Ω | 2 Ω | 2 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss) | 5 pF | 5 pF | 5 pF | 5 pF | 5 pF | 5 pF | 5 pF |
JESD-30 code | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO | NO | NO | NO |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Maker | Fairchild | - | Fairchild | Fairchild | Fairchild | Fairchild | Fairchild |
JEDEC-95 code | - | TO-92 | TO-92 | - | TO-92 | TO-92 | TO-92 |