DDR DRAM, 16MX16, 0.35ns, CMOS, PBGA84
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | SAMSUNG |
| package instruction | FBGA, BGA84,9X15,32 |
| Reach Compliance Code | unknown |
| Maximum access time | 0.35 ns |
| Maximum clock frequency (fCLK) | 533 MHz |
| I/O type | COMMON |
| interleaved burst length | 4,8 |
| JESD-30 code | R-PBGA-B84 |
| memory density | 268435456 bit |
| Memory IC Type | DDR DRAM |
| memory width | 16 |
| Number of terminals | 84 |
| word count | 16777216 words |
| character code | 16000000 |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | |
| organize | 16MX16 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | FBGA |
| Encapsulate equivalent code | BGA84,9X15,32 |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY, FINE PITCH |
| power supply | 1.8 V |
| Certification status | Not Qualified |
| refresh cycle | 8192 |
| Continuous burst length | 4,8 |
| Maximum standby current | 0.008 A |
| Maximum slew rate | 0.205 mA |
| Nominal supply voltage (Vsup) | 1.8 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | OTHER |
| Terminal form | BALL |
| Terminal pitch | 0.8 mm |
| Terminal location | BOTTOM |
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