Rectifier Diode, 1 Phase, 1 Element, 160A, 1200V V(RRM), Silicon, DO-9,
Parameter Name | Attribute value |
Maker | EDAL |
package instruction | O-MUPM-H1 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Other features | LEAKAGE CURRENT IS NOT AT 25 DEG C |
application | POWER |
Shell connection | CATHODE |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.2 V |
JEDEC-95 code | DO-9 |
JESD-30 code | O-MUPM-H1 |
Maximum non-repetitive peak forward current | 2500 A |
Number of components | 1 |
Phase | 1 |
Number of terminals | 1 |
Maximum operating temperature | 190 °C |
Minimum operating temperature | -65 °C |
Maximum output current | 160 A |
Package body material | METAL |
Package shape | ROUND |
Package form | POST/STUD MOUNT |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 1200 V |
Maximum reverse current | 10000 µA |
surface mount | NO |
Terminal form | HIGH CURRENT CABLE |
Terminal location | UPPER |