12A, 60V, 0.117ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Parameter Name | Attribute value |
Maker | Renesas Electronics Corporation |
package instruction | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Other features | ULTRA-LOW RESISTANCE |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 60 V |
Maximum drain current (ID) | 12 A |
Maximum drain-source on-resistance | 0.117 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-252AA |
JESD-30 code | R-PSSO-G2 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |