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KSE13003
KSE13003
High Voltage Switch Mode Applications
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
700
400
9
1.5
3
0.75
20
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CEO
I
EBO
h
FE
V
CE
(sat)
Parameter
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
*DC Current Gain
*Collector Emitter Saturation Voltage
Test Condition
I
C
= 5mA, I
B
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
=1A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.25A
I
C
= 1.5A, I
B
= 0.5A
I
C
= 0.5A, I
B
= 0.1A
I
C
= 1A, I
B
= 0.25A
V
CB
= 10V , f = 0.1MHz
V
CE
= 10V, I
C
= 0.1A
V
CC
=125V, I
C
= 1A
I
B1
= 0.2A, I
B2
= - 0.2A
R
L
= 125Ω
4
1.1
4.0
0.7
21
8
5
Min.
400
Typ.
Max.
10
40
0.5
1
3
1
1.2
V
V
V
V
V
pF
MHz
µs
µs
µs
Units
V
µA
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
*Base Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
* Pulse Test: Pulse Width=5ms, Duty Cycle≤10%
©2001 Fairchild Semiconductor Corporation
Rev. A1, September 2001
KSE13003
Typical Characteristics
2.0
100
V
CE
= 2V
I
C
[A], COLLECTOR CURRENT
1.6
I
B
=
1.2
250mA
h
FE
, DC CURRENT GAIN
mA
500
A
450m
400mA
A
350m
300mA
10
200mA
150mA
100mA
I
B
= 50mA
0.8
1
0.4
I
B
= 0
0.0
0
1
2
3
4
5
0.1
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
10
I
C
= 4 I
B
t
STG
, t
F
[
µ
s], SWITCH TIME
t
STG
1
1
V
BE
(sat)
t
F
0.1
0.1
V
CE
(sat)
0.01
0.01
0.1
1
10
0.01
0.1
1
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Switching Time
10
40
I
C
MAX. (pulse)
35
I
C
[A], COLLECTOR CURRENT
I
C
MAX. (DC)
1
P
C
[W], POWER DISSIPATION
1000
µ
s
10
s
1m
s
5m
30
s
0
µ
10
25
20
15
0.1
10
5
0.01
1
10
100
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, September 2001
KSE13003
Package Demensions
TO-126
±0.10
3.90
8.00
±0.30
3.25
±0.20
14.20MAX
ø3.20
±0.10
11.00
±0.20
(1.00)
0.75
±0.10
1.60
±0.10
0.75
±0.10
±0.30
(0.50)
1.75
±0.20
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
13.06
16.10
±0.20
0.50
–0.05
+0.10
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, September 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H4
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