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SHF1304ASMSTXV

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, HERMETICALLY SEALED, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size96KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SHF1304ASMSTXV Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, HERMETICALLY SEALED, 2 PIN

SHF1304ASMSTXV Parametric

Parameter NameAttribute value
MakerSSDI
package instructionE-GELF-R2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeE-GELF-R2
Maximum non-repetitive peak forward current75 A
Number of components1
Phase1
Number of terminals2
Maximum output current3 A
Package body materialCERAMIC, GLASS-SEALED
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.04 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SHF1304 thru SHF1308
SHF1304SMS thru SHF1308SMS
3 AMP, 400 – 800 Volts
40 - 50 nsec, Hyper Fast Rectifier
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SHF130 _6_ __ __ __
L
= None
or TX , TXV, S
L
Package
= Axial
SMS = Surface Mount
L
Lead Dia
= .050" standard
A = .040" special order
Voltage
4 = 400 V
6 = 600 V
8 = 800 V
L
Screening
2/
Features:
Hyper Fast Recovery: 40 - 50 nsec
PIV to 800 Volts
Hermetically Sealed
Void Free Construction
For High Efficiency Applications
Low Reverse Leakage
Single Chip Construction
Replaces UES 1304 Types
TX, TXV, and S-Level Screening
Available
2/
Maximum Ratings
Peak Repetitive Reverse and
DC Blocking Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, T
A
= 25ºC)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, T
A
= 25ºC)
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Lead, L = 3/8 "
Junction to End Tab
Axial Leaded
Symbol
SHF1304
SHF1306
SHF1308
V
RRM
V
R
Io
Value
400
600
800
3.0
Units
Volts
Amps
I
FSM
75
Amps
Top & Tstg
R
θJL
R
θJE
-65 to +175
20
14
Surface Mount (SMS)
ºC
ºC/W
NOTES:
1/
For Ordering Information, Price, and Availability- Contact Factory.
2/
Screening Based on MIL-PRF-19500. Screening Flows Available on
Request.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0101D
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