EDO DRAM, 4MX16, 50ns, CMOS, PDSO50,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | EDI [Electronic devices inc.] |
| Reach Compliance Code | unknown |
| access mode | FAST PAGE WITH EDO |
| Maximum access time | 50 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I/O type | COMMON |
| JESD-30 code | R-PDSO-G50 |
| JESD-609 code | e0 |
| memory density | 67108864 bit |
| Memory IC Type | EDO DRAM |
| memory width | 16 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 50 |
| word count | 4194304 words |
| character code | 4000000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 4MX16 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | TSOP |
| Encapsulate equivalent code | TSOP50,.46,32 |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 3.3 V |
| Certification status | Not Qualified |
| refresh cycle | 4096 |
| self refresh | NO |
| Maximum standby current | 0.002 A |
| Maximum slew rate | 0.18 mA |
| Maximum supply voltage (Vsup) | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal pitch | 0.8 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| EDI4164MEV50SM | EDI4164MEV70SM | EDI4164MEV50SI | EDI4164MEV60SI | EDI4164MEV60SM | EDI4164MEV70SI | |
|---|---|---|---|---|---|---|
| Description | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, | EDO DRAM, 4MX16, 70ns, CMOS, PDSO50, | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, | EDO DRAM, 4MX16, 70ns, CMOS, PDSO50, |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| access mode | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO |
| Maximum access time | 50 ns | 70 ns | 50 ns | 60 ns | 60 ns | 70 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 code | R-PDSO-G50 | R-PDSO-G50 | R-PDSO-G50 | R-PDSO-G50 | R-PDSO-G50 | R-PDSO-G50 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
| memory density | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit |
| Memory IC Type | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM |
| memory width | 16 | 16 | 16 | 16 | 16 | 16 |
| Number of functions | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 50 | 50 | 50 | 50 | 50 | 50 |
| word count | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words |
| character code | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 125 °C | 85 °C | 85 °C | 125 °C | 85 °C |
| Minimum operating temperature | -55 °C | -55 °C | -40 °C | -40 °C | -55 °C | -40 °C |
| organize | 4MX16 | 4MX16 | 4MX16 | 4MX16 | 4MX16 | 4MX16 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| encapsulated code | TSOP | TSOP | TSOP | TSOP | TSOP | TSOP |
| Encapsulate equivalent code | TSOP50,.46,32 | TSOP50,.46,32 | TSOP50,.46,32 | TSOP50,.46,32 | TSOP50,.46,32 | TSOP50,.46,32 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| power supply | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | 4096 | 4096 | 4096 | 4096 | 4096 | 4096 |
| self refresh | NO | NO | NO | NO | NO | NO |
| Maximum standby current | 0.002 A | 0.002 A | 0.002 A | 0.002 A | 0.002 A | 0.002 A |
| Maximum slew rate | 0.18 mA | 0.18 mA | 0.18 mA | 0.18 mA | 0.18 mA | 0.18 mA |
| Maximum supply voltage (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| surface mount | YES | YES | YES | YES | YES | YES |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | MILITARY | INDUSTRIAL | INDUSTRIAL | MILITARY | INDUSTRIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal pitch | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD
