PDM41027
1 Megabit Static RAM
1M x 1-Bit
Features
s
High speed access times
Com’l: 12, 15, 17 and 20 ns
Ind’l: 15, 17 and 20 ns
s
Low power operation (typical)
- PDM41027SA
Active: 400 mW
Standby: 150 mW
- PDM41027LA
Active: 350 mW
Standby: 100 mW
s
Single +5V (±10%) power supply
s
TTL-compatible inputs and outputs
s
Packages
Plastic SOJ (300 mil) - TSO
Plastic SOJ (400 mil) - SO
Plastic TSOP - T
1
2
3
4
5
6
7
Description
The PDM41027 is a high-performance CMOS static
RAM organized as 1,048,576 x 1-bit. This product is
produced in Paradigm’s proprietary CMOS
technology which offers the designer the highest
speed parts. Writing is accomplished when the write
enable (WE) and the chip enable (CE) inputs are
both LOW. Reading is accomplished when WE
remains HIGH and CE goes LOW.
The PDM41027 operates from a single +5V power
supply and all the inputs and outputs are fully TTL-
compatible. The PDM41027 comes in two versions,
the standard power version PDM41027SA and a low
power version the PDM41027LA. The two versions
are functionally the same and only differ in their
power consumption.
The PDM41027 is available in a 28-pin plastic TSOP,
300-mil plastic SOJ and a 400-mil plastic SOJ pack-
age for surface mount applications.
Functional Block Diagram
8
9
10
11
12
Rev. 2.1 - 7/17/96
4-1
PDM41027
Pin Configuration
TSOP
SOJ
Pin Description
Name
A19-A0
D
IN
D
OUT
WE
CE
NC
V
CC
V
SS
Description
Address Inputs
Data Input
Data Output
Write Enable Input
Chip Enable Input
No Connect
Power (+5V)
Ground
Truth Table
(1)
WE
X
H
L
CE
H
L
L
I/O
Hi-Z
D
OUT
D
IN
MODE
Standby
Read
Write
NOTE: 1. H = V
IH
, L = V
IL
, X = DON’T CARE
Absolute Maximum Ratings
(1)
Symbol
V
TERM
T
BIAS
T
STG
P
T
I
OUT
Rating
Terminal Voltage with Respect to V
SS
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
Com’l.
–0.5 to +7.0
–55 to +125
–55 to +125
1.0
50
Ind.
–0.5 to +7.0
–65 to +135
–65 to +150
1.0
50
Unit
V
°C
°C
W
mA
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RA
TINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods may affect reliability.
Recommended DC Operating Conditions
Symbol
V
CC
V
SS
Industrial
Commercial
Parameter
Supply Voltage
Supply Voltage
Ambient Temperature
Ambient Temperature
Min.
4.5
0
–40
0
Typ.
5.0
0
25
25
Max.
5.5
0
85
70
Unit
V
V
°C
°C
4-2
Rev. 2.1 - 7/17/96
PDM41027
DC Electrical Characteristics
(V
CC
= 5.0V ± 10%)
PDM41027SA
Symbol
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
Parameter
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
I
OL
= 8 mA, V
CC
= Min.
I
OL
= 10 mA, V
CC
= Min.
I
OH
= –4 mA, V
CC
= Min.
Test Conditions
V
CC
= MAX., V
IN
= V
SS
to V
CC
V
CC
= MAX.,
CE = V
IH
, V
OUT
= V
SS
to V
CC
Com’l/
Ind.
Com’l/
Ind.
Min.
–5
–5
–0.5
(1)
2.2
—
—
2.4
Max.
5
5
0.8
6.0
0.4
0.5
—
PDM41027LA
Min.
–5
–5
–0.5
(1)
2.2
—
—
2.4
Max.
5
5
0.8
6.0
0.4
0.5
—
Unit
µA
µA
V
V
V
V
V
1
2
3
4
NOTE: 1. V
IL
(min) = –3.0V for pulse width less than 20 ns
Power Supply Characteristics
-10
Symbol Parameter
I
CC
Operating Current
CE = V
IL
f = f
MAX
= 1/t
RC
V
CC
= Max.
I
OUT
= 0 mA
I
SB
Standby Current
CE = V
IH
f = f
MAX
= 1/t
RC
V
CC
= Max.
I
SB1
Full Standby Current
CE
≥
V
HC
f=0
V
CC
= Max.,
V
IN
≥
V
CC
– 0.2V or
≤
0.2V
-12
-15
-17
-20
Unit
mA
mA
Power Com’l. Com’l Ind. Com’l Ind. Com’l Ind. Com’l Ind.
SA
250
230
240
185
195
165
185
155
165
LA
230
210
220
165
175
155
160
140
150
5
6
7
8
9
SA
LA
SA
LA
80
75
20
10
70
65
15
10
70
65
25
10
55
50
10
5
55
50
15
10
50
45
10
5
50
50
15
10
45
40
10
5
45
40
15
10
mA
mA
mA
mA
NOTES: All values are maximum guaranteed values.
V
LC
≤
0.2V, V
HC
≥
V
CC
– 0.2V
Capacitance
(1)
(T
A
= +25°C, f = 1.0 MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Max.
8
8
Unit
pF
pF
10
11
12
NOTE:1. This parameter is determined by device characterization but is not production tested.
Rev. 2.1 - 7/17/96
4-3
PDM41027
AC Test Conditions
Input Pulse Levels
Input rise and fall times
Input timing reference levels
Output reference levels
Output load
V
SS
to 3.0V
3 ns
1.5V
1.5V
See Figures 1 and 2
Figure 1. Output Load Equivalent
Figure 2. Output Load Equivalent
(for t
LZCE
, t
HZCE
, t
LZWE
, t
HZWE
)
Figure 3.
4-4
Rev. 2.1 - 7/17/96
PDM41027
Read Cycle No. 1
(4,5)
1
2
Read Cycle
No. 2
(2,4,6)
3
4
5
UNDEFINED
6
7
AC Electrical Characteristics
Description
READ Cycle
READ cycle time
Address access time
Chip enable access time
Output hold from address change
Chip enable to output in low Z
(1,3)
Chip disable to output in high Z
(1,2,3)
Chip enable to power up
time
(3)
Sym
t
RC
t
AA
t
ACE
t
OH
t
LZCE
t
HZCE
t
PU
t
PD
0
10
3
5
6
0
12
-10
(7)
-12
(7)
-15
-17
-20
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Units
10
10
10
3
5
6
0
15
12
12
12
3
5
7
0
17
15
15
15
3
5
7
0
20
17
17
17
3
5
8
20
20
20
ns
ns
ns
ns
ns
ns
ns
ns
8
9
10
11
12
Chip disable to power down time
(3)
Notes referenced are after Data Retention Table.
Rev. 2.1 - 7/17/96
4-5
GD32 MCU
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