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S5277BTPA2

Description
DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size54KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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S5277BTPA2 Overview

DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, Signal Diode

S5277BTPA2 Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

S5277BTPA2 Related Products

S5277BTPA2 S5277BTPA1 S5277GTPA1 S5277JTPA1 S5277JTPA2 S5277GTPA2 S5277NTPA1 S5277NTPA2
Description DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, Signal Diode DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, Signal Diode DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, Signal Diode DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, Signal Diode DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, Signal Diode DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, Signal Diode
Maker Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Number of components 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 100 V 100 V 400 V 600 V 600 V 400 V 1000 V 1000 V
surface mount NO NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 - O-PALF-W2 O-PALF-W2
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