DRAM, 64MX72, 0.75ns, CMOS, PDMA184
Parameter Name | Attribute value |
Maker | Infineon |
package instruction | DIMM, DIMM184 |
Reach Compliance Code | unknown |
Maximum access time | 0.75 ns |
Maximum clock frequency (fCLK) | 143 MHz |
I/O type | COMMON |
JESD-30 code | R-PDMA-N184 |
memory density | 4831838208 bit |
memory width | 72 |
Number of terminals | 184 |
word count | 67108864 words |
character code | 64000000 |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 64MX72 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | DIMM |
Encapsulate equivalent code | DIMM184 |
Package shape | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY |
power supply | 2.5 V |
Certification status | Not Qualified |
refresh cycle | 8192 |
Nominal supply voltage (Vsup) | 2.5 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal form | NO LEAD |
Terminal pitch | 1.27 mm |
Terminal location | DUAL |
HYS72D64500GR-7 | HYS72D128520GR-7 | HYS72D128520GR-8 | HYS72D16500GR-7 | HYS72D16500GR-8 | HYS72D32500GR-7 | HYS72D32500GR-8 | HYS72D64500GR-8 | HYS72D32501GR-7 | HYS72D32501GR-8 | |
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Description | DRAM, 64MX72, 0.75ns, CMOS, PDMA184 | DDR DRAM Module, 128MX72, 0.75ns, CMOS, PDMA184 | DDR DRAM Module, 128MX72, 0.8ns, CMOS, PDMA184 | DDR DRAM Module, 16MX72, 0.75ns, CMOS, PDMA184 | DDR DRAM Module, 16MX72, 0.8ns, CMOS, PDMA184 | DDR DRAM Module, 32MX72, 0.75ns, CMOS, PDMA184 | DDR DRAM Module, 32MX72, 0.8ns, CMOS, PDMA184 | DRAM, 64MX72, 0.8ns, CMOS, PDMA184 | DDR DRAM Module, 32MX72, 0.75ns, CMOS, PDMA184 | DDR DRAM Module, 32MX72, 0.8ns, CMOS, PDMA184 |
package instruction | DIMM, DIMM184 | DIMM, DIMM184 | DIMM, DIMM184 | DIMM, DIMM184 | DIMM, DIMM184 | DIMM, DIMM184 | DIMM, DIMM184 | DIMM, DIMM184 | DIMM, DIMM184 | DIMM, DIMM184 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
Maximum access time | 0.75 ns | 0.75 ns | 0.8 ns | 0.75 ns | 0.8 ns | 0.75 ns | 0.8 ns | 0.8 ns | 0.75 ns | 0.8 ns |
Maximum clock frequency (fCLK) | 143 MHz | 143 MHz | 125 MHz | 143 MHz | 125 MHz | 143 MHz | 125 MHz | 125 MHz | 143 MHz | 125 MHz |
I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 code | R-PDMA-N184 | R-PDMA-N184 | R-PDMA-N184 | R-PDMA-N184 | R-PDMA-N184 | R-PDMA-N184 | R-PDMA-N184 | R-PDMA-N184 | R-PDMA-N184 | R-PDMA-N184 |
memory density | 4831838208 bit | 9663676416 bit | 9663676416 bit | 1207959552 bit | 1207959552 bit | 2415919104 bit | 2415919104 bit | 4831838208 bit | 2415919104 bit | 2415919104 bit |
memory width | 72 | 72 | 72 | 72 | 72 | 72 | 72 | 72 | 72 | 72 |
Number of terminals | 184 | 184 | 184 | 184 | 184 | 184 | 184 | 184 | 184 | 184 |
word count | 67108864 words | 134217728 words | 134217728 words | 16777216 words | 16777216 words | 33554432 words | 33554432 words | 67108864 words | 33554432 words | 33554432 words |
character code | 64000000 | 128000000 | 128000000 | 16000000 | 16000000 | 32000000 | 32000000 | 64000000 | 32000000 | 32000000 |
Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
organize | 64MX72 | 128MX72 | 128MX72 | 16MX72 | 16MX72 | 32MX72 | 32MX72 | 64MX72 | 32MX72 | 32MX72 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
encapsulated code | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
Encapsulate equivalent code | DIMM184 | DIMM184 | DIMM184 | DIMM184 | DIMM184 | DIMM184 | DIMM184 | DIMM184 | DIMM184 | DIMM184 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
power supply | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
refresh cycle | 8192 | 8192 | 8192 | 4096 | 4096 | 8192 | 8192 | 8192 | 4096 | 4096 |
Nominal supply voltage (Vsup) | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
Terminal pitch | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
Maker | Infineon | Infineon | Infineon | Infineon | Infineon | - | - | Infineon | Infineon | Infineon |
Memory IC Type | - | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | - | DDR DRAM MODULE | DDR DRAM MODULE |
Base Number Matches | - | 1 | 1 | 1 | 1 | 1 | 1 | - | - | - |