HYMD232M6466-H datasheet, PDF - EEWORLD Datasheet

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HYMD232M6466-H: DescriptionDDR DRAM Module, 32MX64, 0.75ns, CMOS, 67.60 X 31.75 X 3.80 MM, SODIMM-200; Categorystorage storage; File Size318KB，16 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HYMD232M6466-H Overview

DDR DRAM Module, 32MX64, 0.75ns, CMOS, 67.60 X 31.75 X 3.80 MM, SODIMM-200

HYMD232M6466-H Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SK Hynix
Parts packaging code	MODULE
package instruction	DIMM, DIMM200,24
Contacts	200
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N200
memory density	2147483648 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	200
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM200,24
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum standby current	0.16 A
Maximum slew rate	1.5 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.6 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

HYMD232M6466-H Related Products

	HYMD232M6466-H	HYMD232M6466-L	HYMD232M6466-K	HYMD232M646L6-H	HYMD232M646L6-K	HYMD232M646L6-L
Description	DDR DRAM Module, 32MX64, 0.75ns, CMOS, 67.60 X 31.75 X 3.80 MM, SODIMM-200	DDR DRAM Module, 32MX64, 0.8ns, CMOS, 67.60 X 31.75 X 3.80 MM, SODIMM-200	DDR DRAM Module, 32MX64, 0.75ns, CMOS, 67.60 X 31.75 X 3.80 MM, SODIMM-200	DDR DRAM Module, 32MX64, 0.75ns, CMOS, 67.60 X 31.75 X 3.80 MM, SODIMM-200	DDR DRAM Module, 32MX64, 0.75ns, CMOS, 67.60 X 31.75 X 3.80 MM, SODIMM-200	DDR DRAM Module, 32MX64, 0.8ns, CMOS, 67.60 X 31.75 X 3.80 MM, SODIMM-200
Maker	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix
Parts packaging code	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE
package instruction	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24
Contacts	200	200	200	200	200	200
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	0.75 ns	0.8 ns	0.75 ns	0.75 ns	0.75 ns	0.8 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	100 MHz	133 MHz	133 MHz	133 MHz	100 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200
memory density	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit	2147483648 bit
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	64	64	64	64	64	64
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	200	200	200	200	200	200
word count	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words
character code	32000000	32000000	32000000	32000000	32000000	32000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	32MX64	32MX64	32MX64	32MX64	32MX64	32MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192
self refresh	YES	YES	YES	YES	YES	YES
Maximum standby current	0.16 A	0.12 A	0.16 A	0.16 A	0.16 A	0.12 A
Maximum slew rate	1.5 mA	1.36 mA	1.5 mA	1.5 mA	1.5 mA	1.36 mA
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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