ETM36-030 datasheet, PDF - EEWORLD Datasheet

ETM36-030: DescriptionPower Bipolar Transistor, 200A I(C), 320V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin; CategoryDiscrete semiconductor The transistor; File Size131KB，4 Pages; ManufacturerFuji Electric Co., Ltd.

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ETM36-030 Overview

Power Bipolar Transistor, 200A I(C), 320V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Parameter Name	Attribute value
Maker	Fuji Electric Co., Ltd.
package instruction	FLANGE MOUNT, R-PUFM-D3
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	200 A
Collector-emitter maximum voltage	320 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	150
Maximum landing time (tf)	1200 ns
JESD-30 code	R-PUFM-D3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	1000 W
Maximum power dissipation(Abs)	1000 W
Certification status	Not Qualified
Maximum rise time (tr)	2000 ns
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Transistor component materials	SILICON
Maximum off time (toff)	11200 ns
Maximum opening time (tons)	2000 ns

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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