IRLU111 datasheet, PDF - EEWORLD Datasheet

IRLU111: DescriptionPower Field-Effect Transistor, 4A I(D), 80V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3; CategoryDiscrete semiconductor The transistor; File Size52KB，1 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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IRLU111 Overview

Power Field-Effect Transistor, 4A I(D), 80V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

Parameter Name	Attribute value
Maker	SAMSUNG
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	80 V
Maximum drain current (Abs) (ID)	4 A
Maximum drain current (ID)	4 A
Maximum drain-source on-resistance	0.75 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	30 W
Maximum power dissipation(Abs)	30 W
Maximum pulsed drain current (IDM)	16 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	45 ns
Maximum opening time (tons)	45 ns

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