Cache SRAM, 256KX36, 4.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Cypress Semiconductor |
Parts packaging code | BGA |
package instruction | 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119 |
Contacts | 119 |
Reach Compliance Code | compliant |
ECCN code | 3A991.B.2.A |
Maximum access time | 4.5 ns |
Other features | PIPELINED ARCHITECTURE |
Maximum clock frequency (fCLK) | 150 MHz |
I/O type | COMMON |
JESD-30 code | R-PBGA-B119 |
JESD-609 code | e0 |
length | 22 mm |
memory density | 9437184 bit |
Memory IC Type | CACHE SRAM |
memory width | 36 |
Number of functions | 1 |
Number of terminals | 119 |
word count | 262144 words |
character code | 256000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 256KX36 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | BGA |
Encapsulate equivalent code | BGA119,7X17,50 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 2.5/3.3,3.3 V |
Certification status | Not Qualified |
Maximum seat height | 2.4 mm |
Maximum standby current | 0.01 A |
Minimum standby current | 3.14 V |
Maximum slew rate | 0.38 mA |
Maximum supply voltage (Vsup) | 3.63 V |
Minimum supply voltage (Vsup) | 3.135 V |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | TIN LEAD |
Terminal form | BALL |
Terminal pitch | 1.27 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 14 mm |