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NE68133-T1B

Description
S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size590KB,21 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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NE68133-T1B Overview

S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3

NE68133-T1B Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.065 A
Collector-based maximum capacity0.9 pF
Collector-emitter maximum voltage10 V
ConfigurationSINGLE
highest frequency bandS BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)9000 MHz
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