KM736S4017H-6 datasheet, PDF - EEWORLD Datasheet

KM736S4017H-6: DescriptionStandard SRAM, 128KX36, 3.3ns, CMOS, PBGA153, 14 X 22 MM, BGA-153; Categorystorage storage; File Size327KB，14 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KM736S4017H-6 Overview

Standard SRAM, 128KX36, 3.3ns, CMOS, PBGA153, 14 X 22 MM, BGA-153

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	BGA, BGA153,9X17,50
Contacts	153
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	3.3 ns
Other features	SELF-TIMED LATE WRITE; ALSO REQUIRES 1.5V OUTPUT SUPPLY
Maximum clock frequency (fCLK)	167 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B153
length	22 mm
memory density	4718592 bit
Memory IC Type	STANDARD SRAM
memory width	36
Number of functions	1
Number of terminals	153
word count	131072 words
character code	128000
Operating mode	SYNCHRONOUS
organize	128KX36
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA153,9X17,50
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
power supply	1.5,2.5 V
Certification status	Not Qualified
Maximum seat height	2.21 mm
Maximum standby current	0.05 A
Minimum standby current	2.4 V
Maximum slew rate	0.55 mA
Maximum supply voltage (Vsup)	2.6 V
Minimum supply voltage (Vsup)	2.4 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM
width	14 mm

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