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K7M163625A-HI75

Description
ZBT SRAM, 512KX36, 7.5ns, CMOS, PBGA119, BGA-119
Categorystorage    storage   
File Size618KB,28 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K7M163625A-HI75 Overview

ZBT SRAM, 512KX36, 7.5ns, CMOS, PBGA119, BGA-119

K7M163625A-HI75 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeBGA
package instructionBGA,
Contacts119
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time7.5 ns
Other featuresFLOW-THROUGH ARCHITECTURE
JESD-30 codeR-PBGA-B119
length22 mm
memory density18874368 bit
Memory IC TypeZBT SRAM
memory width36
Number of functions1
Number of terminals119
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX36
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
width14 mm
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