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VS-20TQ035-1PBF

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 35V V(RRM), Silicon, TO-263AB, D2PAK-3/2
CategoryDiscrete semiconductor    diode   
File Size156KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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VS-20TQ035-1PBF Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 35V V(RRM), Silicon, TO-263AB, D2PAK-3/2

VS-20TQ035-1PBF Parametric

Parameter NameAttribute value
package instructionD2PAK-3/2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.73 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current400 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage35 V
Maximum reverse current2700 µA
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationSINGLE
Base Number Matches1
VS-20TQ035SPbF, VS-20TQ040SPbF, VS-20TQ045SPbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 20 A
Base
cathode
2
FEATURES
• 150 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
TO-263AB (D
2
PAK)
1
N/C
3
Anode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
TO-263AB
(D
2
PAK)
20 A
35 V, 40 V, 45 V
0.51 V
105 mA at 125 °C
150 °C
Single die
27 mJ
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VS-20TQ... Schottky rectifier series has been optimized
for very low forward voltage drop, with moderate leakage.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
CHARACTERISTICS
Rectangular waveform
Range
t
p
= 5 μs sine
20 A
pk
, T
J
= 125 °C
Range
VALUES
20
35 to 45
1800
0.51
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-20TQ035SPbF
35
VS-20TQ040SPbF
40
VS-20TQ045SPbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current,
see fig. 5
SYMBOL
I
F(AV)
I
FSM
E
AS
I
AR
TEST CONDITIONS
50 % duty cycle at T
C
= 116 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
VALUES
20
1800
400
27
4
mJ
A
A
UNITS
Maximum peak one cycle non-repetitive
surge current, see fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
T
J
= 25 °C, I
AS
= 4 A, L = 3.40 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 08-Dec-14
Document Number: 94168
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

VS-20TQ035-1PBF Related Products

VS-20TQ035-1PBF VS-20TQ045-1PBF VS-20TQ040-1PBF
Description Rectifier Diode, Schottky, 1 Phase, 1 Element, 35V V(RRM), Silicon, TO-263AB, D2PAK-3/2 Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2 Rectifier Diode, Schottky, 1 Phase, 1 Element, 40V V(RRM), Silicon, TO-263AB, D2PAK-3/2
package instruction D2PAK-3/2 R-PSSO-G2 R-PSSO-G2
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Other features FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection CATHODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.73 V 0.73 V 0.73 V
JEDEC-95 code TO-263AB TO-263AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
Maximum non-repetitive peak forward current 400 A 400 A 400 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Guideline AEC-Q101 AEC-Q101 AEC-Q101
Maximum repetitive peak reverse voltage 35 V 45 V 40 V
Maximum reverse current 2700 µA 2700 µA 2700 µA
surface mount YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE
Base Number Matches 1 1 1

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