AP25N10GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Single Drive Requirement
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
100V
80mΩ
23A
S
Description
AP25N10 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited
for high current application due to the low connection resistance. The
through-hole version (AP25N10GJ) are available for low-profile
applications.
G
D
S
TO-252(H)
G
D
S
TO-251(J)
o
Absolute Maximum Ratings@T
j
=25 C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
.
Rating
100
+20
23
14.6
80
96
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
1.3
62.5
110
Units
℃/W
℃/W
℃/W
1
201410214
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
AP25N10GH/J-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=10V, I
D
=16A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=16A
V
DS
=80V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=16A
V
DS
=80V
V
GS
=10V
V
DD
=50V
I
D
=16A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
100
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
14
-
-
-
19
5
6
10
28
17
2
270
8
1.5
Max. Units
-
80
4
-
25
250
+100
30
-
-
-
-
-
-
-
-
3
V
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=80V
,
V
GS
=0V
1060 1700
.
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=16A, V
GS
=0V
I
S
=16A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
90
380
Max. Units
1.3
-
-
V
ns
nC
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP25N10GH/J-HF
50
40
T
C
=25 C
40
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
9 .0V
8 .0V
7.0V
T
C
= 150
o
C
30
10V
9 .0V
8 .0V
7.0V
30
20
20
V
G
= 5 .0V
10
10
V
G
= 5 .0V
0
0
2
4
6
8
10
0
0
2
4
6
8
10
12
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
130
2.4
I
D
= 12 A
T
C
=25 C
2.0
110
o
I
D
=16A
V
G
=10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.6
90
.
1.2
70
0.8
50
0.4
2
4
6
8
10
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
20
16
Normalized V
GS(th)
1.2
1.1
12
I
S
(A)
8
T
j
=150
o
C
T
j
=25
o
C
0.7
4
0
0
0.2
0.4
0.6
0.8
1
0.3
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP25N10GH/J-HF
f=1.0MHz
12
10000
I
D
= 16 A
10
V
GS
, Gate to Source Voltage (V)
8
V
DS
= 64 V
V
DS
= 80 V
V
DS
= 100 V
C (pF)
1000
C
iss
C
oss
6
100
4
10
2
C
rss
0
0
4
8
12
16
20
24
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
100us
10
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
1ms
I
D
(A)
10ms
100ms
1s
DC
T
C
=25 C
Single Pulse
0.1
0.1
1
10
100
1000
0.1
.
0.1
0.05
P
DM
1
t
0.02
T
0.01
o
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
25
V
DS
=5V
20
T
j
=25 C
o
T
j
=150 C
o
V
G
Q
G
10V
I
D
, Drain Current (A)
15
Q
GS
10
Q
GD
5
Charge
0
Q
0
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP25N10GH/J-HF
MARKING INFORMATION
TO-251
25N10GJ
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
25N10GH
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
.
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
京公网安备 11010802033920号
EEWORLD
