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2SJ491-4062

Description
Power Field-Effect Transistor, 20A I(D), 30V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, STO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size70KB,1 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
Download Datasheet Parametric View All

2SJ491-4062 Overview

Power Field-Effect Transistor, 20A I(D), 30V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, STO-220, 3 PIN

2SJ491-4062 Parametric

Parameter NameAttribute value
Parts packaging codeSFM
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.06 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
Base Number Matches1
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