MPSW64 datasheet, PDF - EEWORLD Datasheet

MPSW64: DescriptionTRANSISTOR,BJT,DARLINGTON,PNP,30V V(BR)CEO,500MA I(C),TO-226AE; CategoryDiscrete semiconductor The transistor; File Size164KB，3 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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MPSW64 Overview

TRANSISTOR,BJT,DARLINGTON,PNP,30V V(BR)CEO,500MA I(C),TO-226AE

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NXP
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.5 A
Configuration	DARLINGTON
Minimum DC current gain (hFE)	20000
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1 W
surface mount	NO
Nominal transition frequency (fT)	125 MHz

	MPSW64	MPSW63
Description	TRANSISTOR,BJT,DARLINGTON,PNP,30V V(BR)CEO,500MA I(C),TO-226AE	TRANSISTOR,BJT,DARLINGTON,PNP,30V V(BR)CEO,500MA I(C),TO-226AE
Is it Rohs certified?	incompatible	incompatible
Maker	NXP	NXP
Reach Compliance Code	unknown	unknown
Maximum collector current (IC)	0.5 A	0.5 A
Configuration	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	20000	10000
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	1 W	1 W
surface mount	NO	NO
Nominal transition frequency (fT)	125 MHz	125 MHz

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