Cache SRAM, 64KX32, 4.5ns, CMOS, PQFP100, MS-026, TQFP-100
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Micron Technology |
| Parts packaging code | QFP |
| package instruction | MS-026, TQFP-100 |
| Contacts | 100 |
| Reach Compliance Code | unknown |
| ECCN code | 3A991.B.2.A |
| Maximum access time | 4.5 ns |
| Other features | BURST CONTROL; SELF TIMED WRITE CYCLE; REGISTER ADDRESS; BYTE WRITE CONTROL; AUTOMATIC POWER DOWN |
| Maximum clock frequency (fCLK) | 133 MHz |
| I/O type | COMMON |
| JESD-30 code | R-PQFP-G100 |
| JESD-609 code | e0 |
| length | 20 mm |
| memory density | 2097152 bit |
| Memory IC Type | CACHE SRAM |
| memory width | 32 |
| Number of functions | 1 |
| Number of terminals | 100 |
| word count | 65536 words |
| character code | 64000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 64KX32 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | LQFP |
| Encapsulate equivalent code | QFP100,.63X.87 |
| Package shape | RECTANGULAR |
| Package form | FLATPACK, LOW PROFILE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | 235 |
| power supply | 3.3 V |
| Certification status | Not Qualified |
| Maximum seat height | 1.6 mm |
| Maximum standby current | 0.01 A |
| Minimum standby current | 3.14 V |
| Maximum slew rate | 0.36 mA |
| Maximum supply voltage (Vsup) | 3.6 V |
| Minimum supply voltage (Vsup) | 3.135 V |
| Nominal supply voltage (Vsup) | 3.3 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal pitch | 0.65 mm |
| Terminal location | QUAD |
| Maximum time at peak reflow temperature | 30 |
| width | 14 mm |
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