M470T2953EZ3-CE6 datasheet, PDF

M470T2953EZ3-CE6: DescriptionDDR DRAM Module, 128MX64, 0.45ns, CMOS, SODIMM-200; Categorystorage storage; File Size370KB，22 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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M470T2953EZ3-CE6 Overview

DDR DRAM Module, 128MX64, 0.45ns, CMOS, SODIMM-200

Parameter Name	Attribute value
Maker	SAMSUNG
package instruction	SODIMM-200
Reach Compliance Code	unknown
access mode	DUAL BANK PAGE BURST
Maximum access time	0.45 ns
Other features	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX
JESD-30 code	R-XZMA-N200
length	67.6 mm
memory density	8589934592 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	200
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	128MX64
Package body material	UNSPECIFIED
encapsulated code	DIMM
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Maximum seat height	30.15 mm
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	NO
technology	CMOS
Temperature level	OTHER
Terminal form	NO LEAD
Terminal pitch	0.6 mm
Terminal location	ZIG-ZAG
width	3.8 mm

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