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MA4E400H-226

Description
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE, HERMETIC SEALED, CERAMIC, CASE 226, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size84KB,3 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Download Datasheet Parametric View All

MA4E400H-226 Overview

SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE, HERMETIC SEALED, CERAMIC, CASE 226, 4 PIN

MA4E400H-226 Parametric

Parameter NameAttribute value
MakerTE Connectivity
package instructionS-CQMW-F4
Contacts4
Manufacturer packaging codeCASE 226
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage5 V
ConfigurationBRIDGE, 4 ELEMENTS
Maximum diode capacitance0.25 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandKU BAND
JESD-30 codeS-CQMW-F4
Number of components4
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formMICROWAVE
Maximum power dissipation0.3 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationQUAD
Schottky barrier typeHIGH BARRIER
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