Fast Page DRAM, 2MX8, 50ns, CMOS, PDSO28,
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | LG Semicon Co., Ltd. |
Reach Compliance Code | unknown |
access mode | FAST PAGE |
Maximum access time | 50 ns |
Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION |
I/O type | COMMON |
JESD-30 code | R-PDSO-J28 |
JESD-609 code | e0 |
memory density | 16777216 bit |
Memory IC Type | FAST PAGE DRAM |
memory width | 8 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 28 |
word count | 2097152 words |
character code | 2000000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 2MX8 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | SOJ |
Encapsulate equivalent code | SOJ28,.44 |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 3.3 V |
Certification status | Not Qualified |
refresh cycle | 2048 |
self refresh | YES |
Maximum standby current | 0.00015 A |
Maximum slew rate | 0.11 mA |
Maximum supply voltage (Vsup) | 3.6 V |
Minimum supply voltage (Vsup) | 3 V |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | J BEND |
Terminal pitch | 1.27 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |