1N/FDLL 456/A / 457/A / 458/A / 459/A
1N/FDLL 456/A - 1N/FDLL 459/A
COLOR BAND MARKING
DEVICE
FDLL456
FDLL456A
FDLL457
FDLL457A
FDLL458
FDLL458A
FDLL459
FDLL459A
1ST BAND
BROWN
BROWN
RED
RED
RED
RED
RED
RED
2ND BAND
WHITE
WHITE
BLACK
BLACK
BROWN
BROWN
RED
RED
LL-34
DO-35
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
High Conductance Low Leakage Diode
Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics.
Absolute Maximum Ratings*
Symbol
W
IV
Working Inverse Voltage
TA = 25°C unless otherwise noted
Parameter
456/A
457/A
458/A
459/A
Value
25
60
125
175
200
500
600
1.0
4.0
-65 to +200
175
Units
V
V
V
V
mA
mA
mA
A
A
°C
°C
I
O
I
F
i
f
i
f(surge)
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 200 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
1N / FDLL 456/A - 459/A
500
3.33
300
Units
mW
mW/°C
°C/W
1997
Fairchild Semiconductor Corporation
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This datasheet contains the design specifications for
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Rev. E
Power technology
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