FQD2N60C datasheet, PDF - EEWORLD Datasheet

FQD2N60C: DescriptionPower Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252; CategoryDiscrete semiconductor The transistor; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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FQD2N60C Overview

Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ON Semiconductor
package instruction	ROHS COMPLIANT, DPAK-3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	120 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	1.9 A
Maximum drain-source on-resistance	4.7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	7.6 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

	FQD2N60C	FQU2N60C
Description	Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252	Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Is it Rohs certified?	conform to	conform to
Maker	ON Semiconductor	ON Semiconductor
package instruction	ROHS COMPLIANT, DPAK-3	IN-LINE, R-PSIP-T3
Reach Compliance Code	not_compliant	compliant
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	120 mJ	120 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V	600 V
Maximum drain current (ID)	1.9 A	1.9 A
Maximum drain-source on-resistance	4.7 Ω	4.7 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSIP-T3
Number of components	1	1
Number of terminals	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	7.6 A	7.6 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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