AS7C33512NTD18A-133TQC datasheet, PDF

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AS7C33512NTD18A-133TQC: DescriptionZBT SRAM, 512KX18, 4.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100; Categorystorage storage; File Size439KB，19 Pages; ManufacturerIntegrated Silicon Solution ( ISSI )

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AS7C33512NTD18A-133TQC Overview

ZBT SRAM, 512KX18, 4.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

AS7C33512NTD18A-133TQC Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Integrated Silicon Solution ( ISSI )
Parts packaging code	QFP
package instruction	LQFP,
Contacts	100
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	4.5 ns
Other features	PIPELINED ARCHITECTURE; LATE WRITE
JESD-30 code	R-PQFP-G100
JESD-609 code	e0
length	20 mm
memory density	9437184 bit
Memory IC Type	ZBT SRAM
memory width	18
Number of functions	1
Number of terminals	100
word count	524288 words
character code	512000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX18
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	1.6 mm
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
width	14 mm

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November 2004

AS7C33512NTD18A

3.3V 512K

18 Pipelined burst Synchronous SRAM with NTD

Features

• Organization: 524,288 words × 18 bits

• NTD

™

architecture for efficient bus operation

• Fast clock speeds to 166 MHz

• Fast clock to data access: 3.5/4.0 ns

• Fast OE access time: 3.5/4.0 ns

• Fully synchronous operation

• Common data inputs and data outputs

• Asynchronous output enable control

• Available in100-pin TQFP

• Byte write enables

• Clock enable for operation hold

• Multiple chip enables for easy expansion

• 3.3V core power supply

• 2.5V or 3.3V I/O operation with separate V

DDQ

• Self-timed WRITE cycles

• “Interleaved” or “Linear burst” modes

• Snooze mode for standby operation

Logic block diagram

A[18:0]

Address

Burst logic

CLK

CE0

CE1

CE2

R/W

BWa

BWb

ADV/LD

LBO

CLK

Write delay

addr. registers

CLK

Control

logic

CLK

Write Buffer

512K x 18

SRAM

Array

DQ [a:b]

Data

Input

CLK

CEN

CLK

Output

DQ[a:b]

Selection Guide

-166

Minimum cycle time

Maximum clock frequency

Maximum clock access time

Maximum operating current

Maximum standby current

Maximum CMOS standby current (DC)

11/30/04

;

v.2.1

–133

7.5

133

400

100

Units

MHz

1 of 19

166

3.5

475

130

Alliance Semiconductor

AS7C33512NTD18A-133TQC Related Products

	AS7C33512NTD18A-133TQC	AS7C33512NTD18A-166TQCN	AS7C33512NTD18A-166TQIN	AS7C33512NTD18A-133TQCN	AS7C33512NTD18A-133TQIN	AS7C33512NTD18A-166TQC	AS7C33512NTD18A-166TQI	AS7C33512NTD18A-133TQI
Description	ZBT SRAM, 512KX18, 4.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100	ZBT SRAM, 512KX18, 4ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100	ZBT SRAM, 512KX18, 4ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100	ZBT SRAM, 512KX18, 4.5ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100	ZBT SRAM, 512KX18, 4.5ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100	ZBT SRAM, 512KX18, 4ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100	ZBT SRAM, 512KX18, 4ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100	ZBT SRAM, 512KX18, 4.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
Is it lead-free?	Contains lead	Lead free	Lead free	Lead free	Lead free	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	conform to	conform to	conform to	conform to	incompatible	incompatible	incompatible
Maker	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
Parts packaging code	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP
package instruction	LQFP,	LQFP,	LQFP,	LQFP,	LQFP,	LQFP,	LQFP,	LQFP,
Contacts	100	100	100	100	100	100	100	100
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	4.5 ns	4 ns	4 ns	4.5 ns	4.5 ns	4 ns	4 ns	4.5 ns
Other features	PIPELINED ARCHITECTURE; LATE WRITE	PIPELINED ARCHITECTURE; LATE WRITE	PIPELINED ARCHITECTURE; LATE WRITE	PIPELINED ARCHITECTURE; LATE WRITE	PIPELINED ARCHITECTURE; LATE WRITE	PIPELINED ARCHITECTURE; LATE WRITE	PIPELINED ARCHITECTURE; LATE WRITE	PIPELINED ARCHITECTURE; LATE WRITE
JESD-30 code	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100
JESD-609 code	e0	e3	e3	e3	e3	e0	e0	e0
length	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm
memory density	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit	9437184 bit
Memory IC Type	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM
memory width	18	18	18	18	18	18	18	18
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	100	100	100	100	100	100	100	100
word count	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
character code	512000	512000	512000	512000	512000	512000	512000	512000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	85 °C	70 °C	85 °C	70 °C	85 °C	85 °C
organize	512KX18	512KX18	512KX18	512KX18	512KX18	512KX18	512KX18	512KX18
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	245	245	245	245	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm
Maximum supply voltage (Vsup)	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V
Minimum supply voltage (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	TIN LEAD	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	30	30	30	30	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm

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