2SK367-Y datasheet, PDF - EEWORLD Datasheet

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2SK367-Y: DescriptionTRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1B, 3 PIN, FET General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size175KB，4 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SK367-Y Overview

TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1B, 3 PIN, FET General Purpose Small Signal

2SK367-Y Parametric

Parameter Name	Attribute value
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
Configuration	SINGLE
FET technology	JUNCTION
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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2SK367

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK367

For Audio, High Voltage Amplifier and Constant Current

Applications

High breakdown voltage: V

GDS

−100

V (min)

High input impedance: I

GSS

−1.0

nA (max) (V

−80

Small package

Unit: mm

Maximum Ratings

(Ta

25°C)

Characteristics

Gate-drain voltage

Gate current

Drain power dissipation

Junction temperature

Storage temperature range

Symbol

GDS

stg

Rating

-100

200

125

-55~125

Unit

°C

JEDEC

JEITA

TOSHIBA

―

2-4E1B

Electrical Characteristics

(Ta

25°C)

Characteristics

Gate cut-off current

Gate-drain breakdown voltage

Drain current

Gate-source cut-off voltage

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Noise figure

Symbol

GSS

(BR) GDS

DSS

(Note)

GS (OFF)

ïY

iss

rss

Test Condition

= -80

V, V

0, I

= -100 mA

10 V, V

10 V, I

0.1

10 V, V

0, f

1 kHz

10 V, V

0, f

1 MHz

10 V, I

0, f

1 MHz

10 V, V

0, R

100 kW,

100 Hz

Weight: 0.13 g (typ.)

Min

-100

0.6

-0.4

1.5

Typ.

4.6

0.5

Max

-1.0

6.5

-3.5

Unit

Note: I

DSS

classification

O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA

2003-03-26

2SK367

RESTRICTIONS ON PRODUCT USE

000707EAA

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc..

The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this

document shall be made at the customer’s own risk.

The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other

rights of the third parties which may result from its use. No license is granted by implication or otherwise under

any intellectual property or other rights of TOSHIBA CORPORATION or others.

The information contained herein is subject to change without notice.

2003-03-26

2SK367-Y Related Products

	2SK367-Y	2SK367-GR	2SK367-O
Description	TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1B, 3 PIN, FET General Purpose Small Signal	TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1B, 3 PIN, FET General Purpose Small Signal	TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1B, 3 PIN, FET General Purpose Small Signal
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Contacts	3	3	3
Reach Compliance Code	unknow	unknow	unknow
Configuration	SINGLE	SINGLE	SINGLE
FET technology	JUNCTION	JUNCTION	JUNCTION
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	125 °C	125 °C	125 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1

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