GS882Z36CB-300MT datasheet, PDF

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GS882Z36CB-300MT: DescriptionZBT SRAM, 256KX36, 5ns, CMOS, PBGA119, FPBGA-119; Categorystorage storage; File Size455KB，33 Pages; ManufacturerGSI Technology; Websitehttp://www.gsitechnology.com/

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GS882Z36CB-300MT Overview

ZBT SRAM, 256KX36, 5ns, CMOS, PBGA119, FPBGA-119

GS882Z36CB-300MT Parametric

Parameter Name	Attribute value
Maker	GSI Technology
Parts packaging code	BGA
package instruction	BGA,
Contacts	119
Reach Compliance Code	compliant
ECCN code	3A991.B.2.B
Maximum access time	5 ns
Other features	FLOW-THROUGH OR PIPELINED ARCHITECTURE, IT CAN ALSO OPERATES AT AS 3.3 V SUPPLY
JESD-30 code	R-PBGA-B119
length	22 mm
memory density	9437184 bit
Memory IC Type	ZBT SRAM
memory width	36
Number of functions	1
Number of terminals	119
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	256KX36
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	1.99 mm
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	BALL
Terminal pitch	1.27 mm
Terminal location	BOTTOM
width	14 mm

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GS882Z18/36CB-300M

GS882Z18/36CD-300M

119-bump and 165-bump BGA

Military Temp

Features

• Military Temperature Range

• NBT (No Bus Turn Around) functionality allows zero wait

Read-Write-Read bus utilization; fully pin-compatible with

both pipelined and flow through NtRAM™, NoBL™ and

ZBT™ SRAMs

• 2.5 V or 3.3 V +10%/–10% core power supply

• 2.5 V or 3.3 V I/O supply

• User-configurable Pipeline and Flow Through mode

• ZQ mode pin for user-selectable high/low output drive

• IEEE 1149.1 JTAG-compatible Boundary Scan

• LBO pin for Linear or Interleave Burst mode

• Pin-compatible with 2M, 4M, and 18M devices

• Byte write operation (9-bit Bytes)

• 3 chip enable signals for easy depth expansion

• ZZ Pin for automatic power-down

• JEDEC-standard 119-bump BGA and 165-bump FPBGA

packages

9Mb Pipelined and Flow Through

Synchronous NBT SRAM

Functional Description

300 MHz

2.5 V or 3.3 V V

2.5 V or 3.3 V I/O

The GS882Z18/36C(B/D)-300M is a 9Mbit Synchronous

Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL

or other pipelined read/double late write or flow through read/

single late write SRAMs, allow utilization of all available bus

bandwidth by eliminating the need to insert deselect cycles

when the device is switched from read to write cycles.

Because it is a synchronous device, address, data inputs, and

read/write control inputs are captured on the rising edge of the

input clock. Burst order control (LBO) must be tied to a power

rail for proper operation. Asynchronous inputs include the

Sleep mode enable (ZZ) and Output Enable. Output Enable can

be used to override the synchronous control of the output

drivers and turn the RAM's output drivers off at any time.

Write cycles are internally self-timed and initiated by the rising

edge of the clock input. This feature eliminates complex off-

chip write pulse generation required by asynchronous SRAMs

and simplifies input signal timing.

The GS882Z18/36C(B/D)-300M may be configured by the

user to operate in Pipeline or Flow Through mode. Operating

as a pipelined synchronous device, in addition to the rising-

edge-triggered registers that capture input signals, the device

incorporates a rising edge triggered output register. For read

cycles, pipelined SRAM output data is temporarily stored by

the edge-triggered output register during the access cycle and

then released to the output drivers at the next rising edge of

clock.

The GS882Z18/36C(B/D)-300M is implemented with GSI's

high performance CMOS technology and is available in

JEDEC-standard 119-bump BGA and 165-bump FPBGA

packages.

Parameter Synopsis

-300M

Pipeline

3-1-1-1

tCycle

Curr (x18)

Curr (x36)

tCycle

Curr (x18)

Curr (x36)

2.5

3.3

280

315

5.0

220

245

Unit

Flow Through

2-1-1-1

Rev: 1.00 1/2011

1/33

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS882Z36CB-300MT Related Products

	GS882Z36CB-300MT	GS882Z36CD-300MT	GS882Z18CB-300MT	GS882Z18CD-300MT
Description	ZBT SRAM, 256KX36, 5ns, CMOS, PBGA119, FPBGA-119	ZBT SRAM, 256KX36, 5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165	ZBT SRAM, 512KX18, 5ns, CMOS, PBGA119, FPBGA-119	ZBT SRAM, 512KX18, 5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
Maker	GSI Technology	GSI Technology	GSI Technology	GSI Technology
Parts packaging code	BGA	BGA	BGA	BGA
package instruction	BGA,	LBGA,	BGA,	LBGA,
Contacts	119	165	119	165
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B
Maximum access time	5 ns	5 ns	5 ns	5 ns
Other features	FLOW-THROUGH OR PIPELINED ARCHITECTURE, IT CAN ALSO OPERATES AT AS 3.3 V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE, IT CAN ALSO OPERATES AT AS 3.3 V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE, IT CAN ALSO OPERATES AT AS 3.3 V SUPPLY	FLOW-THROUGH OR PIPELINED ARCHITECTURE, IT CAN ALSO OPERATES AT AS 3.3 V SUPPLY
JESD-30 code	R-PBGA-B119	R-PBGA-B165	R-PBGA-B119	R-PBGA-B165
length	22 mm	15 mm	22 mm	15 mm
memory density	9437184 bit	9437184 bit	9437184 bit	9437184 bit
Memory IC Type	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM
memory width	36	36	18	18
Number of functions	1	1	1	1
Number of terminals	119	165	119	165
word count	262144 words	262144 words	524288 words	524288 words
character code	256000	256000	512000	512000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
organize	256KX36	256KX36	512KX18	512KX18
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	BGA	LBGA	BGA	LBGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY	GRID ARRAY, LOW PROFILE	GRID ARRAY	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.99 mm	1.4 mm	1.99 mm	1.4 mm
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	BALL	BALL	BALL	BALL
Terminal pitch	1.27 mm	1 mm	1.27 mm	1 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
width	14 mm	13 mm	14 mm	13 mm

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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