Transistor
2SD0814, 2SD0814A
(2SD814, 2SD814A)
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise
amplification
Unit: mm
M
ain
Di
sc te
on na
tin nc
ue e/
d
q
q
q
s
Features
0.40
+0.10
ñ0.05
3
0.16
+0.10
-0.06
s
Absolute Maximum Ratings
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
Collector to
2SD0814
(Ta=25˚C)
1.1
+0.2
-0.1
150
185
150
185
5
base voltage
Collector to
2SD0814A
2SD0814
emitter voltage 2SD0814A
Emitter to base voltage
Peak collector current
Collector current
V
V
100
50
mA
mA
1:Base
2:Emitter
3:Collector
0 to 0.1
V
1.1
+0.3
-0.1
Ratings
Collector power dissipation
Junction temperature
Storage temperature
T
stg
–55 ~ +150
tin
ue
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter
voltage
(Ta=25˚C)
Symbol
/D
2SD0814
isc
I
CBO
2SD0814A
ce
V
CEO
V
EBO
h
FE*
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
Ma
int
en
Emitter to base voltage
V
CE(sat)
f
T
C
ob
NV
*
h
FE
Rank classification
Rank
h
FE
Q
90 ~ 155
2SD0814
2SD0814A
PQ
LQ
R
130 ~ 220
PR
LR
S
185 ~ 330
PS
LS
Note.) The Part numbers in the Parenthesis show
conventional part number.
Marking
Symbol
556
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
-0.05
10°
Unit
(0.65)
High collector to emitter voltage V
CEO
.
Low noise voltage NV.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1.50
+0.25
-0.05
2.8
+0.2
-0.3
1
2
EIAJ:SC–59
Mini3-G1 Package
200
150
mW
˚C
˚C
Marking symbol :
P
(2SD0814)
L
(2SD0814A)
on
Conditions
min
typ
max
1
V
CB
= 100V, I
E
= 0
I
C
= 100µA, I
B
= 0
I
E
= 10µA, I
C
= 0
150
185
5
0.4
±0.2
5°
Unit
µA
V
V
an
V
CE
= 5V, I
C
= 10mA
90
330
1
I
C
= 30mA, I
B
= 3mA
V
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
150
2.3
MHz
pF
R
g
= 100kΩ, Function = FLAT
150
mV
Transistor
P
C
— Ta
240
120
Ta=25˚C
200
100
2SD0814, 2SD0814A
I
C
— V
CE
120
V
CE
=10V
100
25˚C
I
C
— V
BE
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
Collector current I
C
(mA)
160
80
120
60
I
B
=2.0mA
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
Ta=75˚C
80
–25˚C
60
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
30
10
3
1
I
C
/I
B
=10
0.3
0.1
Ta=75˚C
25˚C
–25˚C
0.03
0.01
0.1
0.3
1
3
10
30
100
Collector current I
C
(mA)
5
Collector output capacitance C
ob
(pF)
3
2
1
0
1
3
10
30
100
Ma
int
en
4
an
ce
Collector to base voltage V
CB
/D
I
E
=0
f=1MHz
Ta=25˚C
isc
C
ob
— V
CB
(V)
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
0
0
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
M
ain
Di
sc te
on na
tin nc
ue e/
d
80
40
40
40
20
20
2.0
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
h
FE
— I
C
f
T
— I
E
600
200
V
CE
=10V
V
CB
=10V
Ta=25˚C
Forward current transfer ratio h
FE
500
Transition frequency f
T
(MHz)
160
400
120
300
Ta=75˚C
–25˚C
25˚C
80
200
100
40
0
0.1
0.3
1
3
10
30
100
0
–1
–3
–10
–30
–100
ue
Collector current I
C
(mA)
Emitter current I
E
(mA)
on
tin
557
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
Pl
pla nc
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Ma
int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
di
京公网安备 11010802033920号
EEWORLD
