Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Fairchild |
Reach Compliance Code | compliant |
Configuration | Single |
Maximum drain current (Abs) (ID) | 8.1 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-609 code | e0 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 74 W |
surface mount | YES |
Terminal surface | Tin/Lead (Sn/Pb) |