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2SC3553DRF

Description
Small Signal Bipolar Transistor, 0.5A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, SPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size44KB,3 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
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2SC3553DRF Overview

Small Signal Bipolar Transistor, 0.5A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, SPAK-3

2SC3553DRF Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage35 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)230 MHz
Base Number Matches1

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