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2N3859

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size296KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

2N3859 Overview

Transistor

2N3859 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)100
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.62 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)90 MHz
Base Number Matches1
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