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2SA1953-B

Description
TRANSISTOR 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size234KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SA1953-B Overview

TRANSISTOR 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal

2SA1953-B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)500
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
Base Number Matches1
2SA1953
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1953
General Purpose Amplifier Applications
Switching and Muting Switch Application
Low saturation voltage: V
CE (sat)
(1) =
−15
mV (typ.)
@I
C
=
−10
mA/I
B
=
−0.5
mA
Large collector current: I
C
=
−500
mA (max)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−15
−12
−5
−500
−50
150
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TO-236MOD
SC-59
TOSHIBA
2-3F1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.012 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Start of commercial production
1998-10
1
2014-03-01

2SA1953-B Related Products

2SA1953-B 2SA1953-A 2SA1953(TE85L,F)
Description TRANSISTOR 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal Small Signal Bipolar Transistor
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 ,
Reach Compliance Code unknow unknow unknown
Base Number Matches 1 1 1
Is it lead-free? Contains lead Contains lead -
Is it Rohs certified? incompatible incompatible -
Parts packaging code SOT-23 SOT-23 -
Contacts 3 3 -
ECCN code EAR99 EAR99 -
Maximum collector current (IC) 0.5 A 0.5 A -
Collector-emitter maximum voltage 12 V 12 V -
Configuration SINGLE SINGLE -
Minimum DC current gain (hFE) 500 300 -
JEDEC-95 code TO-236 TO-236 -
JESD-30 code R-PDSO-G3 R-PDSO-G3 -
Number of components 1 1 -
Number of terminals 3 3 -
Maximum operating temperature 125 °C 125 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) 240 240 -
Polarity/channel type PNP PNP -
Maximum power dissipation(Abs) 0.15 W 0.15 W -
Certification status Not Qualified Not Qualified -
surface mount YES YES -
Terminal form GULL WING GULL WING -
Terminal location DUAL DUAL -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
Nominal transition frequency (fT) 130 MHz 130 MHz -
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