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JANTXV2N4449UA

Description
Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size62KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANTXV2N4449UA Overview

Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-4

JANTXV2N4449UA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-XDSO-N4
Contacts4
Reach Compliance Codecompli
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JESD-30 codeR-XDSO-N4
JESD-609 codee0
Number of components1
Number of terminals4
Maximum operating temperature200 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineMIL-19500/317K
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)18 ns
Maximum opening time (tons)12 ns
Base Number Matches1
TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/317
Devices
2N2369A
2N2369AU
2N2369AUA
2N2369AUB
Qualified Level
2N4449
2N4449U
2N4449UA
2N4449UB
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Symbol
V
CEO
V
EBO
V
CBO
V
CES
All UB
20
6.0
All others
15
4.5
Unit
Vdc
Vdc
Vdc
Vdc
W
W
40
40
0
@ T
A
= +25 C @ T
C
= +25
0
C
Total Power Dissipation
2N2369A; 2N4449
0.50
(1)
1.2
(2)
All UA
0.50
(5)
1.2
(2)
P
T
(6)
All UB
0.40
1.4
(7)
All U
0.60
(3)
1.5
(4)
Operating & Storage Junction Temperature Range T
op
,
T
stg
-65 to +200
TO-18* (TO-206AA)
2N2369A
0
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
2N2369A; 2N4449
All UA
All UB
All U
Thermal Resistance, Ambient-to-Case
2N2369A; 2N4449
All UA
All UB
All U
1) Derate linearly 3.08 mW/
0
C above T
A
= +37.5
0
C
2) Derate linearly 6.85 mW/
0
C above T
C
= +25
0
C
3) Derate linearly 3.44 mW/
0
C above T
A
= +63.5
0
C
4) Derate linearly 8.55 mW/
0
C above T
C
= +63.5
0
C
TO-46 (TO-206AB)
2N4449
Symbol
Max.
146
125
135
117
325
350
437
291
0
Unit
R
θ
JC
C/mW
SURFACE MOUNT
UA*
R
θ
JA
0
C/mW
SURFACE MOUNT
UB*
5) Derate linearly 2.86 mW/
0
C above T
C
= +63.5
0
C
6) Derate linearly 2.29 mW/
0
C above T
C
= +63.5
0
C
7) Derate linearly 8.00 mW/
0
C above T
C
= +63.5
0
C
SURFACE MOUNT
U*
*See appendix A for
package outline
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

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Description Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-4 Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-4 Small Signal Bipolar Transistor, 20V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-3 Small Signal Bipolar Transistor, 20V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-3 Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-6 Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-6 Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-4 Small Signal Bipolar Transistor, 15V V(BR)CEO, 2-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-6
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
package instruction SMALL OUTLINE, R-XDSO-N4 SMALL OUTLINE, R-XDSO-N4 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-XDSO-N6 SMALL OUTLINE, R-CDSO-N6 SURFACE MOUNT PACKAGE-4 SMALL OUTLINE, R-XDSO-N6
Contacts 4 4 3 3 6 6 4 6
Reach Compliance Code compli unknown compli compli unknow unknow unknown not_compliant
Collector-emitter maximum voltage 15 V 15 V 20 V 20 V 15 V 15 V 15 V 15 V
Configuration SINGLE SINGLE SINGLE SINGLE SEPARATE, 2 ELEMENTS SINGLE SINGLE SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 20 20 20 20 20 20 20 20
JESD-30 code R-XDSO-N4 R-XDSO-N4 R-CDSO-N3 R-CDSO-N3 R-XDSO-N6 R-CDSO-N6 R-XDSO-N4 R-XDSO-N6
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 2 1 1 2
Number of terminals 4 4 3 3 6 6 4 6
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C
Package body material UNSPECIFIED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Qualified
Guideline MIL-19500/317K MIL-19500/317K MIL-19500/317K MIL-19500/317K MIL-19500/317K MIL-19500/317 MIL-19500 MIL-19500
surface mount YES YES YES YES YES YES YES YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb)
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maximum off time (toff) 18 ns 18 ns 18 ns 18 ns 18 ns 18 ns 18 ns 18 ns
Maximum opening time (tons) 12 ns 12 ns 12 ns 12 ns 12 ns 12 ns 12 ns 12 ns
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED
Base Number Matches 1 - 1 1 1 1 - -

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