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Datasheet> All Categories > Discrete semiconductor> The transistor> CSA1220AR
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CSA1220AR

Description
Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size59KB，3 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
Environmental Compliance
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CSA1220AR Overview

Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

CSA1220AR Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerCDIL[Continental Device India Pvt. Ltd.]
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)1.2 A
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)20 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)175 MHz

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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
PNP PLASTIC POWER TRANSISTORS.
CSA1220, CSA1220A
TO126
Plastic Package
EC
B
Complementary CSC2690, 2690A
Audio Frequency and High Frequency Power Amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
V
CBO
Collector -Base Voltage (open emitter)
V
CEO
Collector -Emitter Voltage(open base)
V
EBO
Emitter Base Voltage(open collector)
I
C
Collector Current (Pulse)(1)
I
B
Base Current
Peak*
P
C
Collector Power Dissipation @ Ta=25ºC
@ Tc=25ºC
T
j
Junction Temperature
T
stg
Storage Temperature Range
1220 1220A
>120
>160
>120
>160
>5.0
<2.5
<0.3
3.0
1.2
20
150
-65 to +150
UNIT
V
V
V
A
A
W
W
ºC
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
I
CBO
V
CB
=120V, I
E
=0
Collector Cut off Current
I
EBO
V
EB
=3V,I
C
=0
Emitter Cut off Current
Breakdown Voltages
V
CEO
I
C
=1mA, I
B
=0
V
CBO
I
C
=1mA, I
E
=0
V
EBO
I
C
=0, I
E
=1mA
Saturation Voltages
V
CE(Sat)
*
V
BE(
sat)*
h
FE
*
I
C
=1A,I
B
=0.2A
I
C
=5mA, V
CE
=5V
I
C
=0.3mA, V
CE
=5V**
V
CB
=10V, I
E
=0
I
C
=0.2A, V
CE
=5V
1220
-
-
>120
>120
1220A
1.0
1.0
>160
>160
>5.0
UNIT
µA
µA
V
V
V
DC Current Gain
<0.7
<1.3
>35
60-320
typ
typ
26
175
V
V
Output capacitance at f=1MHz
Transition frequency
C
o
f
T
pF
MHz
*Pulse Condition: Width < 350µs, Duty Cycle < 2%. Pulsed
(1) PW < ms, Duty cycle<50%
**hFE Classification : R:60-120 O:100-200 Y:160-320
Continental Device India Limited
Data Sheet
Page 1 of 3

CSA1220AR Related Products

CSA1220AR CSA1220AO CSA1220AY CSA1220A CSA1220Y CSA1220R CSA1220O
Description Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 1.2A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 1.2A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin Power Bipolar Transistor, 1.2A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Maker CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.]
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 1.2 A 1.2 A 1.2 A 1.2 A 1.2 A 1.2 A 1.2 A
Collector-emitter maximum voltage 160 V 160 V 160 V 160 V 120 V 120 V 120 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 60 100 160 60 160 60 100
JEDEC-95 code TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 20 W 20 W 20 W 20 W 20 W 20 W 20 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 175 MHz 175 MHz 175 MHz 175 MHz 175 MHz 175 MHz 175 MHz
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 - -

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