Mixer Diode, Low Barrier, S Band, Silicon,
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Microsemi |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Configuration | COMMON CATHODE, 2 ELEMENTS |
Maximum diode capacitance | 0.5 pF |
Diode component materials | SILICON |
Diode type | MIXER DIODE |
Maximum forward voltage (VF) | 0.28 V |
frequency band | S BAND |
JESD-30 code | S-CTMW-F3 |
JESD-609 code | e0 |
Number of components | 2 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | CERAMIC, METAL-SEALED COFIRED |
Package shape | SQUARE |
Package form | MICROWAVE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Maximum power dissipation | 0.1 W |
Certification status | Not Qualified |
surface mount | YES |
technology | SCHOTTKY |
Terminal surface | TIN LEAD |
Terminal form | FLAT |
Terminal location | TRIPLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Schottky barrier type | LOW BARRIER |